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Conference Paper: Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's

TitleInstability in GIDL current of thermally-nitrided-oxide n-MOSFET's
Authors
Ma, ZJLai, PTCheng, YCHuang, MQ
Issue Date1991
PublisherInstitute of Electrical and Electronics Engineers Korea Section.
Citation
ICVC '91: 2nd International Conference on VLSI and CAD, October 22 - 25, 1991, Seoul, Korea, p. 191-194 How to Cite?
DescriptionSession 16: no. THPM16.4
Persistent Identifierhttp://hdl.handle.net/10722/204128
Series/Report no.Technical digest

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJ-
dc.contributor.authorLai, PT-
dc.contributor.authorCheng, YC-
dc.contributor.authorHuang, MQ-
dc.date.accessioned2014-09-19T20:06:29Z-
dc.date.available2014-09-19T20:06:29Z-
dc.date.issued1991-
dc.identifier.citationICVC '91: 2nd International Conference on VLSI and CAD, October 22 - 25, 1991, Seoul, Korea, p. 191-194-
dc.identifier.urihttp://hdl.handle.net/10722/204128-
dc.descriptionSession 16: no. THPM16.4-
dc.languageeng-
dc.publisherInstitute of Electrical and Electronics Engineers Korea Section.-
dc.relation.ispartofInternational Conference on VLSI and CAD Proceedings-
dc.relation.ispartofseriesTechnical digest-
dc.titleInstability in GIDL current of thermally-nitrided-oxide n-MOSFET's-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros240575-
dc.identifier.spage191-
dc.identifier.epage194-
dc.publisher.placeSeoul-

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