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Conference Paper: Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques

TitleElectrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques
Authors
Zeng, X.Lai, PTNg, WT
Issue Date1994
PublisherIEEE. The journal's website is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000245
Citation
The 40th Anniversary International Electron Devices Meeting (IEDM '94), San Francisco, CA., 11-14 December 1994. How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204137
ISSN
0163-1918
2020 SCImago Journal Rankings: 0.827

 

DC FieldValueLanguage
dc.contributor.authorZeng, X.en_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorNg, WTen_US
dc.date.accessioned2014-09-19T20:06:36Z-
dc.date.available2014-09-19T20:06:36Z-
dc.date.issued1994en_US
dc.identifier.citationThe 40th Anniversary International Electron Devices Meeting (IEDM '94), San Francisco, CA., 11-14 December 1994.en_US
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/204137-
dc.languageengen_US
dc.publisherIEEE. The journal's website is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000245-
dc.relation.ispartofInternational Electron Devices Meeting IEDM Technical Digest-
dc.titleElectrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniquesen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros240603en_US
dc.publisher.placeUnited States-
dc.identifier.issnl0163-1918-

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