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Conference Paper: Polarized Photoluminescence and Carrier Localization of GaInP2 Alloy with Partial CuPt-type Atomic Ordering

TitlePolarized Photoluminescence and Carrier Localization of GaInP2 Alloy with Partial CuPt-type Atomic Ordering
Authors
Ning, JQXu, SDeng, ZSu, ZC
KeywordsGaInP2 alloy
polarized photoluminescence
spontaneous atomic ordering
carrier localization
Issue Date2014
PublisherThe Physical Society of Hong Kong (PSHK).
Citation
The 17th Annual Conference of the Physical Society of Hong Kong (PSHK), Hong Kong, China, 7 June 2014. In the Abstracts of the 17th Annual Conference of the Physical Society of Hong Kong (PSHK), 2014, p. 23 How to Cite?
AbstractGaInP2 is a technologically important energy material for high-efficiency solar cells and redcolor LDs. Therefore, its optical properties and electronic strictures are of particularly interest. In this talk, we report polarized photoluminescence (PL) spectra of GaInP2 alloy with spontaneous CuPt-type atomic ordering. By examining variable-temperature polarized PL spectra in detail, it is found that the luminescence from GaInP2 is composed of two components: polarized and non-polarized parts. These two components exhibit dissimilar temperature dependence. The former is ascribed to the emission of carriers localized in the ordered domains while the latter to the emission of carriers localized in the disordered regions. Thermal activation and transfer of localized carriers from the ordered domains to the disordered regions was revealed and characterized with a thermal activation energy of 10 meV.
DescriptionTheme 2: Energy Materials and Devices
Invited talk
Persistent Identifierhttp://hdl.handle.net/10722/204590

 

DC FieldValueLanguage
dc.contributor.authorNing, JQen_US
dc.contributor.authorXu, S-
dc.contributor.authorDeng, Z-
dc.contributor.authorSu, ZC-
dc.date.accessioned2014-09-20T00:13:46Z-
dc.date.available2014-09-20T00:13:46Z-
dc.date.issued2014en_US
dc.identifier.citationThe 17th Annual Conference of the Physical Society of Hong Kong (PSHK), Hong Kong, China, 7 June 2014. In the Abstracts of the 17th Annual Conference of the Physical Society of Hong Kong (PSHK), 2014, p. 23en_US
dc.identifier.urihttp://hdl.handle.net/10722/204590-
dc.descriptionTheme 2: Energy Materials and Devices-
dc.descriptionInvited talk-
dc.description.abstractGaInP2 is a technologically important energy material for high-efficiency solar cells and redcolor LDs. Therefore, its optical properties and electronic strictures are of particularly interest. In this talk, we report polarized photoluminescence (PL) spectra of GaInP2 alloy with spontaneous CuPt-type atomic ordering. By examining variable-temperature polarized PL spectra in detail, it is found that the luminescence from GaInP2 is composed of two components: polarized and non-polarized parts. These two components exhibit dissimilar temperature dependence. The former is ascribed to the emission of carriers localized in the ordered domains while the latter to the emission of carriers localized in the disordered regions. Thermal activation and transfer of localized carriers from the ordered domains to the disordered regions was revealed and characterized with a thermal activation energy of 10 meV.en_US
dc.languageengen_US
dc.publisherThe Physical Society of Hong Kong (PSHK).-
dc.relation.ispartofAnnual Conference of the Physical Society of Hong Kong (PSHK)en_US
dc.subjectGaInP2 alloy-
dc.subjectpolarized photoluminescence-
dc.subjectspontaneous atomic ordering-
dc.subjectcarrier localization-
dc.titlePolarized Photoluminescence and Carrier Localization of GaInP2 Alloy with Partial CuPt-type Atomic Orderingen_US
dc.typeConference_Paperen_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.identifier.hkuros238095en_US
dc.identifier.spage23-
dc.identifier.epage23-
dc.publisher.placeHong Kong-

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