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Article: Effects of Nb Doping Level on the Electronic Transport, Photoelectric Effect and Magnetoresistance Across La0.5Ca0.5MnO3/Nb:SrTiO3 Junctions

TitleEffects of Nb Doping Level on the Electronic Transport, Photoelectric Effect and Magnetoresistance Across La0.5Ca0.5MnO3/Nb:SrTiO3 Junctions
Authors
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2013, v. 103 n. 25, article no. 252103, p. 1-3 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/207739
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, JFen_US
dc.contributor.authorJIANG, YCen_US
dc.contributor.authorChen, MGen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2015-01-19T09:39:29Z-
dc.date.available2015-01-19T09:39:29Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 103 n. 25, article no. 252103, p. 1-3-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/207739-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 103 n. 25, article no. 252103, p. 1-3 and may be found at https://doi.org/10.1063/1.4851076-
dc.titleEffects of Nb Doping Level on the Electronic Transport, Photoelectric Effect and Magnetoresistance Across La0.5Ca0.5MnO3/Nb:SrTiO3 Junctionsen_US
dc.typeArticleen_US
dc.identifier.emailWang, JF: jfwwang@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4851076en_US
dc.identifier.scopuseid_2-s2.0-84891386580-
dc.identifier.hkuros242143en_US
dc.identifier.volume103en_US
dc.identifier.issue25-
dc.identifier.spagearticle no. 252103, p. 1-
dc.identifier.epagearticle no. 252103, p. 3-
dc.identifier.isiWOS:000329973800039-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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