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Conference Paper: Zn-vacancy related defects identified in ZnO films grown by pulsed laser deposition
| Title | Zn-vacancy related defects identified in ZnO films grown by pulsed laser deposition |
|---|---|
| Authors | |
| Issue Date | 2015 |
| Citation | The 17th International Conference on Positron Annihilation (ICPA-17), Wuhan, China, 20-25 September 2015. How to Cite? |
| Abstract | Undoped and Cu-doped ZnO grown on sapphire using pulsed laser deposition (PLD) were studied by positron annihilation spectroscopy (PAS), photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM) and secondary ion mass spectroscopy (SIMS). In the undoped samples, two kinds of VZn-related defects, namely VZn1 and VZn2 are identified. VZn1 was identified in as-grown samples grown at relatively low substrate (~300 oC). After annealing at 900 oC, VZn-2, the green luminescence (GL) peaking at 2.47 eV and the near band edge (NBE) emission at 3.23 eV in the low temperature photoluminescence (LT-PL) were simultaneously introduced. Another kind of VZn-related defect is identified in the Cu-doped ZnO sample, and is tentatively assigned to the VZn decorated with the Cu. |
| Persistent Identifier | http://hdl.handle.net/10722/230154 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ling, FCC | - |
| dc.contributor.author | Wang, Z | - |
| dc.contributor.author | Luo, C | - |
| dc.contributor.author | Anwand, W | - |
| dc.contributor.author | Wagner, A | - |
| dc.date.accessioned | 2016-08-23T14:15:26Z | - |
| dc.date.available | 2016-08-23T14:15:26Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.citation | The 17th International Conference on Positron Annihilation (ICPA-17), Wuhan, China, 20-25 September 2015. | - |
| dc.identifier.uri | http://hdl.handle.net/10722/230154 | - |
| dc.description.abstract | Undoped and Cu-doped ZnO grown on sapphire using pulsed laser deposition (PLD) were studied by positron annihilation spectroscopy (PAS), photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM) and secondary ion mass spectroscopy (SIMS). In the undoped samples, two kinds of VZn-related defects, namely VZn1 and VZn2 are identified. VZn1 was identified in as-grown samples grown at relatively low substrate (~300 oC). After annealing at 900 oC, VZn-2, the green luminescence (GL) peaking at 2.47 eV and the near band edge (NBE) emission at 3.23 eV in the low temperature photoluminescence (LT-PL) were simultaneously introduced. Another kind of VZn-related defect is identified in the Cu-doped ZnO sample, and is tentatively assigned to the VZn decorated with the Cu. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Internatinoal Conference on Positron Annihilation, ICPA-17 | - |
| dc.title | Zn-vacancy related defects identified in ZnO films grown by pulsed laser deposition | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Ling, FCC: ccling@hkucc.hku.hk | - |
| dc.identifier.email | Wang, Z: zilan@hku.hk | - |
| dc.identifier.authority | Ling, FCC=rp00747 | - |
| dc.identifier.hkuros | 262240 | - |