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Article: GaN Hemispherical Micro-cavities

TitleGaN Hemispherical Micro-cavities
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 108 n. 3, article no. 031110 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/231902
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZHANG, Y-
dc.contributor.authorFENG, C-
dc.contributor.authorWang, T-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-09-20T05:26:15Z-
dc.date.available2016-09-20T05:26:15Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 108 n. 3, article no. 031110-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/231902-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 108 n. 3, article no. 031110 and may be found at https://doi.org/10.1063/1.4940375-
dc.titleGaN Hemispherical Micro-cavities-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4940375-
dc.identifier.scopuseid_2-s2.0-84957022133-
dc.identifier.hkuros263402-
dc.identifier.volume108-
dc.identifier.issue3-
dc.identifier.spagearticle no. 031110-
dc.identifier.epagearticle no. 031110-
dc.identifier.isiWOS:000373055500010-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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