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Article: Optical Crosstalk Analysis of Micro-pixelated GaN-based Light-emitting Diodes on Sapphire and Si Substrates

TitleOptical Crosstalk Analysis of Micro-pixelated GaN-based Light-emitting Diodes on Sapphire and Si Substrates
Authors
Li, KHCheung, YFTang, CWZhao, CLau, KMChoi, HW
Keywordsconfocal microscopy
GaN
light-emitting diodes
optical crosstalk
sapphire
silicon
Issue Date2016
PublisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319
Citation
Physics Status Solidi (A), 2016, v. 213 n. 5, p. 1193-1198 How to Cite?
DOI: http://dx.doi.org/10.1002/pssa.201532789
Persistent Identifierhttp://hdl.handle.net/10722/231903
ISSN
1862-6300
2021 Impact Factor: 2.170
2020 SCImago Journal Rankings: 0.532
ISI Accession Number ID
WOS:000378398400016

 

DC FieldValueLanguage
dc.contributor.authorLi, KH-
dc.contributor.authorCheung, YF-
dc.contributor.authorTang, CW-
dc.contributor.authorZhao, C-
dc.contributor.authorLau, KM-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-09-20T05:26:16Z-
dc.date.available2016-09-20T05:26:16Z-
dc.date.issued2016-
dc.identifier.citationPhysics Status Solidi (A), 2016, v. 213 n. 5, p. 1193-1198-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/10722/231903-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319-
dc.relation.ispartofPhysics Status Solidi (A)-
dc.rightspostprint: This is the accepted version of the following article: FULL CITE, which has been published in final form at [Link to final article]. Preprint This is the pre-peer reviewed version of the following article: FULL CITE, which has been published in final form at [Link to final article].-
dc.subjectconfocal microscopy-
dc.subjectGaN-
dc.subjectlight-emitting diodes-
dc.subjectoptical crosstalk-
dc.subjectsapphire-
dc.subjectsilicon-
dc.titleOptical Crosstalk Analysis of Micro-pixelated GaN-based Light-emitting Diodes on Sapphire and Si Substrates-
dc.typeArticle-
dc.identifier.emailLi, KH: khei@eee.hku.hk-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.doi10.1002/pssa.201532789-
dc.identifier.scopuseid_2-s2.0-84969335423-
dc.identifier.hkuros263413-
dc.identifier.volume213-
dc.identifier.issue5-
dc.identifier.spage1193-
dc.identifier.epage1198-
dc.identifier.isiWOS:000378398400016-
dc.publisher.placeGermany-
dc.identifier.issnl1862-6300-

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