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Article: Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

TitleEffects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor
Authors
Liu, LNChoi, HWXu, JPLai, PT
KeywordsGaAs
gate
high-k dielectrics
metal−oxide−semiconductor capacitors
TaON
yttrium
Issue Date2016
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270
Citation
Physica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707 How to Cite?
DOI: http://dx.doi.org/10.1002/pssr.201600227
Persistent Identifierhttp://hdl.handle.net/10722/231908
ISSN
1862-6254
2021 Impact Factor: 3.277
2020 SCImago Journal Rankings: 0.786
ISI Accession Number ID
WOS:000386599100010

 

DC FieldValueLanguage
dc.contributor.authorLiu, LN-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-09-20T05:26:18Z-
dc.date.available2016-09-20T05:26:18Z-
dc.date.issued2016-
dc.identifier.citationPhysica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/10722/231908-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270-
dc.relation.ispartofPhysica Status Solidi - Rapid Research Letters-
dc.rightsThis is the accepted version of the following article: Physica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707, which has been published in final form at http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201600227/abstract-
dc.subjectGaAs-
dc.subjectgate-
dc.subjecthigh-k dielectrics-
dc.subjectmetal−oxide−semiconductor capacitors-
dc.subjectTaON-
dc.subjectyttrium-
dc.titleEffects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepostprint-
dc.identifier.doi10.1002/pssr.201600227-
dc.identifier.scopuseid_2-s2.0-84983611860-
dc.identifier.hkuros263479-
dc.identifier.volume10-
dc.identifier.issue9-
dc.identifier.spage703-
dc.identifier.epage707-
dc.identifier.isiWOS:000386599100010-
dc.publisher.placeGermany-
dc.identifier.issnl1862-6254-

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