File Download

There are no files associated with this item.

Supplementary

Conference Paper: Optical investigation of ion damage and strain relaxation on plasma-etched InGaN/GaN microdisks by scanning near-field optical microscopy and spectroscopy

TitleOptical investigation of ion damage and strain relaxation on plasma-etched InGaN/GaN microdisks by scanning near-field optical microscopy and spectroscopy
Authors
Huang, JZhang, YFeng, CChoi, HW
Issue Date2015
Citation
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015. How to Cite?
DescriptionWeOP137
Persistent Identifierhttp://hdl.handle.net/10722/232277

 

DC FieldValueLanguage
dc.contributor.authorHuang, J-
dc.contributor.authorZhang, Y-
dc.contributor.authorFeng, C-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-09-20T05:28:55Z-
dc.date.available2016-09-20T05:28:55Z-
dc.date.issued2015-
dc.identifier.citationThe 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015.-
dc.identifier.urihttp://hdl.handle.net/10722/232277-
dc.descriptionWeOP137-
dc.languageeng-
dc.relation.ispartofInternational Conference on Nitride Semiconductors, ICNS-11-
dc.titleOptical investigation of ion damage and strain relaxation on plasma-etched InGaN/GaN microdisks by scanning near-field optical microscopy and spectroscopy-
dc.typeConference_Paper-
dc.identifier.emailHuang, J: jahuang@HKUCC-COM.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.hkuros263493-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats