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Conference Paper: Exchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

TitleExchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography
Authors
Li, XLeung, CWLin, KWChan, MSPong, PWT
KeywordsExchange bias
Nanosphere lithography
Nanostructures
Issue Date2016
PublisherIEEE.
Citation
The 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, 4-6 May 2016. In Conference Proceedings, 2016 How to Cite?
DOI: http://dx.doi.org/10.1109/ISNE.2016.7543341
AbstractExchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices. © 2016 IEEE.
DescriptionSession W1P: paper no. W1P-4-19
Persistent Identifierhttp://hdl.handle.net/10722/232324
ISBN
978-150902439-1

 

DC FieldValueLanguage
dc.contributor.authorLi, X-
dc.contributor.authorLeung, CW-
dc.contributor.authorLin, KW-
dc.contributor.authorChan, MS-
dc.contributor.authorPong, PWT-
dc.date.accessioned2016-09-20T05:29:13Z-
dc.date.available2016-09-20T05:29:13Z-
dc.date.issued2016-
dc.identifier.citationThe 5th International Symposium on Next-Generation Electronics (ISNE 2016), Hsinchu, Taiwan, 4-6 May 2016. In Conference Proceedings, 2016-
dc.identifier.isbn978-150902439-1-
dc.identifier.urihttp://hdl.handle.net/10722/232324-
dc.descriptionSession W1P: paper no. W1P-4-19-
dc.description.abstractExchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices. © 2016 IEEE.-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofInternational Symposium on Next-Generation Electronics Proceedings-
dc.rightsInternational Symposium on Next-Generation Electronics Proceedings. Copyright © IEEE.-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectExchange bias-
dc.subjectNanosphere lithography-
dc.subjectNanostructures-
dc.titleExchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography-
dc.typeConference_Paper-
dc.identifier.emailPong, PWT: ppong@hkucc.hku.hk-
dc.identifier.authorityPong, PWT=rp00217-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ISNE.2016.7543341-
dc.identifier.scopuseid_2-s2.0-84985960375-
dc.identifier.hkuros265584-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 160927-

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