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Article: Negative differential resistance in monolayer WTe2 tunneling transistors

TitleNegative differential resistance in monolayer WTe<inf>2</inf> tunneling transistors
Authors
KeywordsTunneling field effect transistors
Negative differential resistance
Transition metal dichalcogenide
Issue Date2015
Citation
Nanotechnology, 2015, v. 26, n. 17, p. 1-5 How to Cite?
Abstract© 2015 IOP Publishing Ltd.We report theoretical investigations of quantum transport in monolayer transition metal dichalcogenide (TMDC) tunneling field effect transistors (TFETs). Due to the specific electronic structure of TMDC WTe2 , a transmission valley is found in the conduction band (CB). For a proper choice of the doping, gate and supply voltages the WTe 2 TFET can produce a giant negative differential resistance (NDR) with a peak to valley ratio as large as 103. The mechanism of NDR is identified to be due to a transport-mode bottleneck, i.e., the band to band tunneling from the valence band of the source is partially blocked by a transmission valley of the CB of the drain. More generally, our calculations show that electronic structures of at least six TMDC materials possess the transmission valley.
Persistent Identifierhttp://hdl.handle.net/10722/236692
ISSN
2017 Impact Factor: 3.404
2015 SCImago Journal Rankings: 1.196
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fei-
dc.contributor.authorWang, Jian-
dc.contributor.authorGuo, Hong-
dc.date.accessioned2016-12-01T09:08:37Z-
dc.date.available2016-12-01T09:08:37Z-
dc.date.issued2015-
dc.identifier.citationNanotechnology, 2015, v. 26, n. 17, p. 1-5-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/236692-
dc.description.abstract© 2015 IOP Publishing Ltd.We report theoretical investigations of quantum transport in monolayer transition metal dichalcogenide (TMDC) tunneling field effect transistors (TFETs). Due to the specific electronic structure of TMDC WTe2 , a transmission valley is found in the conduction band (CB). For a proper choice of the doping, gate and supply voltages the WTe 2 TFET can produce a giant negative differential resistance (NDR) with a peak to valley ratio as large as 103. The mechanism of NDR is identified to be due to a transport-mode bottleneck, i.e., the band to band tunneling from the valence band of the source is partially blocked by a transmission valley of the CB of the drain. More generally, our calculations show that electronic structures of at least six TMDC materials possess the transmission valley.-
dc.languageeng-
dc.relation.ispartofNanotechnology-
dc.subjectTunneling field effect transistors-
dc.subjectNegative differential resistance-
dc.subjectTransition metal dichalcogenide-
dc.titleNegative differential resistance in monolayer WTe<inf>2</inf> tunneling transistors-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/26/17/175201-
dc.identifier.scopuseid_2-s2.0-84926472340-
dc.identifier.hkuros245982-
dc.identifier.volume26-
dc.identifier.issue17-
dc.identifier.spage1-
dc.identifier.epage5-
dc.identifier.eissn1361-6528-
dc.identifier.isiWOS:000353110200003-

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