File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy

TitleSuspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy
Authors
KeywordsB2. Bi2Se3
B2. Ga2Se3
A1. Suspended Ga2Se3 Film
B1. Topological insulator
A3. Molecular-Beam Epitaxy
Issue Date2017
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal of Crystal Growth, 2017, v. 459, p. 76-80 How to Cite?
AbstractHigh-index Bi2Se3(221) has been successfully grown on partially suspended Ga2Se3(001). The Ga2Se3 layer was formed by selenation of GaSb(001) surface, which revealed a suspended structure supported only by some GaSb nano-pillars. Such a growth behavior may be beneficial for achieving heterostructures with large lattice misfits and suppressing the coupling between the substrate and deposit. Bi2Se3, a typical topological insulator, has been grown on Ga2Se3 along the high-index [221] direction despite of the large lattice mismatch.
Persistent Identifierhttp://hdl.handle.net/10722/237772
ISSN
2019 Impact Factor: 1.632
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, B-
dc.contributor.authorXia, Y-
dc.contributor.authorHo, WK-
dc.contributor.authorXie, MH-
dc.date.accessioned2017-01-20T02:28:20Z-
dc.date.available2017-01-20T02:28:20Z-
dc.date.issued2017-
dc.identifier.citationJournal of Crystal Growth, 2017, v. 459, p. 76-80-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/10722/237772-
dc.description.abstractHigh-index Bi2Se3(221) has been successfully grown on partially suspended Ga2Se3(001). The Ga2Se3 layer was formed by selenation of GaSb(001) surface, which revealed a suspended structure supported only by some GaSb nano-pillars. Such a growth behavior may be beneficial for achieving heterostructures with large lattice misfits and suppressing the coupling between the substrate and deposit. Bi2Se3, a typical topological insulator, has been grown on Ga2Se3 along the high-index [221] direction despite of the large lattice mismatch.-
dc.languageeng-
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro-
dc.relation.ispartofJournal of Crystal Growth-
dc.rightsPosting accepted manuscript (postprint): © <year>. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/-
dc.subjectB2. Bi2Se3-
dc.subjectB2. Ga2Se3-
dc.subjectA1. Suspended Ga2Se3 Film-
dc.subjectB1. Topological insulator-
dc.subjectA3. Molecular-Beam Epitaxy-
dc.titleSuspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy-
dc.typeArticle-
dc.identifier.emailLi, B: silasph@hku.hk-
dc.identifier.emailHo, WK: howk@hku.hk-
dc.identifier.emailXie, MH: mhxie@hku.hk-
dc.identifier.authorityXie, MH=rp00818-
dc.identifier.doi10.1016/j.jcrysgro.2016.11.057-
dc.identifier.scopuseid_2-s2.0-84998631534-
dc.identifier.hkuros270933-
dc.identifier.volume459-
dc.identifier.spage76-
dc.identifier.epage80-
dc.identifier.isiWOS:000393004600012-
dc.publisher.placeNetherlands-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats