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Article: Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment

TitleImproved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment
Authors
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2016, v. 37, p. 1574-1577 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247429
ISSN
2019 Impact Factor: 4.221
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, XD-
dc.contributor.authorSONG, J-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:07Z-
dc.date.available2017-10-18T08:27:07Z-
dc.date.issued2016-
dc.identifier.citationIEEE Electron Device Letters, 2016, v. 37, p. 1574-1577-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/247429-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Letters-
dc.rightsIEEE Electron Device Letters. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. -
dc.titleImproved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/LED.2016.2615879-
dc.identifier.hkuros280826-
dc.identifier.volume37-
dc.identifier.spage1574-
dc.identifier.epage1577-
dc.identifier.isiWOS:000389332700011-
dc.publisher.placeUnited States-

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