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- Publisher Website: 10.1109/LED.2016.2615879
- Scopus: eid_2-s2.0-85000716897
- WOS: WOS:000389332700011
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Article: Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment
| Title | Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment |
|---|---|
| Authors | |
| Keywords | Ar plasma treatment contact resistance down-scaling thin-film transistor (TFT) α-IGZO |
| Issue Date | 2016 |
| Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
| Citation | IEEE Electron Device Letters, 2016, v. 37, p. 1574-1577 How to Cite? |
| Persistent Identifier | http://hdl.handle.net/10722/247429 |
| ISSN | 2021 Impact Factor: 4.816 2020 SCImago Journal Rankings: 1.337 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huang, XD | - |
| dc.contributor.author | SONG, J | - |
| dc.contributor.author | Lai, PT | - |
| dc.date.accessioned | 2017-10-18T08:27:07Z | - |
| dc.date.available | 2017-10-18T08:27:07Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | IEEE Electron Device Letters, 2016, v. 37, p. 1574-1577 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/247429 | - |
| dc.language | eng | - |
| dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | - |
| dc.relation.ispartof | IEEE Electron Device Letters | - |
| dc.rights | IEEE Electron Device Letters. Copyright © IEEE. | - |
| dc.rights | ©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
| dc.subject | Ar plasma treatment | - |
| dc.subject | contact resistance | - |
| dc.subject | down-scaling thin-film transistor (TFT) | - |
| dc.subject | α-IGZO | - |
| dc.title | Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment | - |
| dc.type | Article | - |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
| dc.identifier.authority | Lai, PT=rp00130 | - |
| dc.identifier.doi | 10.1109/LED.2016.2615879 | - |
| dc.identifier.scopus | eid_2-s2.0-85000716897 | - |
| dc.identifier.hkuros | 280826 | - |
| dc.identifier.volume | 37 | - |
| dc.identifier.spage | 1574 | - |
| dc.identifier.epage | 1577 | - |
| dc.identifier.isi | WOS:000389332700011 | - |
| dc.publisher.place | United States | - |
| dc.identifier.issnl | 0741-3106 | - |