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Article: High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature

TitleHigh-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature
Authors
Issue Date2016
Citation
Journal of Display Technology, 2016, v. 12, p. 1522-1527 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247433
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, XD-
dc.contributor.authorMa, Y-
dc.contributor.authorSONG, J-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:11Z-
dc.date.available2017-10-18T08:27:11Z-
dc.date.issued2016-
dc.identifier.citationJournal of Display Technology, 2016, v. 12, p. 1522-1527-
dc.identifier.urihttp://hdl.handle.net/10722/247433-
dc.languageeng-
dc.relation.ispartofJournal of Display Technology-
dc.titleHigh-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/JDT.2016.2630046-
dc.identifier.hkuros280861-
dc.identifier.volume12-
dc.identifier.spage1522-
dc.identifier.epage1527-
dc.identifier.isiWOS:000393996200006-

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