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Article: Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

TitleImproved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Authors
Wen, MXu, JPLiu, LLai, PTTang, WM
KeywordsAnnealing
electron field mobility
FETs
high-k gate dielectric
multilayer MoS2
Issue Date2017
Citation
IEEE Transactions on Electron Devices, 2017, v. 64, p. 1020-1025 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2017.2650920
Persistent Identifierhttp://hdl.handle.net/10722/247434
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000396056700042

 

DC FieldValueLanguage
dc.contributor.authorWen, M-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:11Z-
dc.date.available2017-10-18T08:27:11Z-
dc.date.issued2017-
dc.identifier.citationIEEE Transactions on Electron Devices, 2017, v. 64, p. 1020-1025-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/247434-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectAnnealing-
dc.subjectelectron field mobility-
dc.subjectFETs-
dc.subjecthigh-k gate dielectric-
dc.subjectmultilayer MoS2-
dc.titleImproved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2017.2650920-
dc.identifier.scopuseid_2-s2.0-85010645282-
dc.identifier.hkuros280866-
dc.identifier.volume64-
dc.identifier.spage1020-
dc.identifier.epage1025-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000396056700042-
dc.identifier.issnl0018-9383-

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