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Article: Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate

TitleMonolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate
Authors
Issue Date2018
PublisherOptical Society of America. The Journal's web site is located at https://www.osapublishing.org/optica/home.cfm
Citation
Optica, 2018, v. 5 n. 5, p. 564-569 How to Cite?
AbstractThe characteristics of monolithically integrated light-emitting diodes (LEDs), photodetectors (PDs), and waveguides on a GaN-on-Si wafer are investigated. The InGaN/GaN multi-quantum wells, which are responsible for blue light emission in LEDs, are also used for photodetection in PDs. Despite the Stokes shift, a spectral overlap of ∼25  nm between the emission and absorption spectra provides the PDs with sufficient photosensitivity to signals from the emitter while remaining insensitive to ambient lighting. Optical interconnects in the form of linear or bent suspended waveguides bridging the LEDs and PDs are formed by selective detachment of etched GaN mesas from the Si substrate. Additionally, the PDs can be detached from the substrate and remounted on an elevated platform, owing to the flexibility of the thin-film waveguide. The 150  μm×150  μm LEDs and PDs exhibit rapid response on nanosecond time scales, which is attributed to fast radiative recombinations as well as minimized resistive-capacitive (RC) delays, enabling transmission of pseudorandom binary sequence (PRBS) data signals at rates of 250 Mb/s with an opening in the eye diagram. Together with multichannel transmission free of crosstalk, the ability of the planar and three-dimensional monolithic photonic systems to handle visible-light communication (VLC) applications is demonstrated.
Persistent Identifierhttp://hdl.handle.net/10722/259280
ISSN
2017 Impact Factor: 7.536
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, KH-
dc.contributor.authorFu, WYG-
dc.contributor.authorCheung, YF-
dc.contributor.authorWong, KKY-
dc.contributor.authorWang, Y-
dc.contributor.authorLau, KM-
dc.contributor.authorChoi, HW-
dc.date.accessioned2018-09-03T04:04:22Z-
dc.date.available2018-09-03T04:04:22Z-
dc.date.issued2018-
dc.identifier.citationOptica, 2018, v. 5 n. 5, p. 564-569-
dc.identifier.issn2334-2536-
dc.identifier.urihttp://hdl.handle.net/10722/259280-
dc.description.abstractThe characteristics of monolithically integrated light-emitting diodes (LEDs), photodetectors (PDs), and waveguides on a GaN-on-Si wafer are investigated. The InGaN/GaN multi-quantum wells, which are responsible for blue light emission in LEDs, are also used for photodetection in PDs. Despite the Stokes shift, a spectral overlap of ∼25  nm between the emission and absorption spectra provides the PDs with sufficient photosensitivity to signals from the emitter while remaining insensitive to ambient lighting. Optical interconnects in the form of linear or bent suspended waveguides bridging the LEDs and PDs are formed by selective detachment of etched GaN mesas from the Si substrate. Additionally, the PDs can be detached from the substrate and remounted on an elevated platform, owing to the flexibility of the thin-film waveguide. The 150  μm×150  μm LEDs and PDs exhibit rapid response on nanosecond time scales, which is attributed to fast radiative recombinations as well as minimized resistive-capacitive (RC) delays, enabling transmission of pseudorandom binary sequence (PRBS) data signals at rates of 250 Mb/s with an opening in the eye diagram. Together with multichannel transmission free of crosstalk, the ability of the planar and three-dimensional monolithic photonic systems to handle visible-light communication (VLC) applications is demonstrated.-
dc.languageeng-
dc.publisherOptical Society of America. The Journal's web site is located at https://www.osapublishing.org/optica/home.cfm-
dc.relation.ispartofOptica-
dc.rightsOptica. Copyright © Optical Society of America.-
dc.titleMonolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate-
dc.typeArticle-
dc.identifier.emailLi, KH: khli@eee.hku.hk-
dc.identifier.emailFu, WYG: wyfu@hku.hk-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.emailWong, KKY: kywong@eee.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.authorityWong, KKY=rp00189-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.doi10.1364/OPTICA.5.000564-
dc.identifier.hkuros288873-
dc.identifier.volume5-
dc.identifier.issue5-
dc.identifier.spage564-
dc.identifier.epage569-
dc.identifier.isiWOS:000432560400009-
dc.publisher.placeUnited States-

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