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Article: Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor

TitleEffects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor
Authors
Huang, XDMA, YSONG, JLai, PTTang, WM
KeywordsInGaZnO (IGZO)
InO
metal-hydroxyl (M-OH)
postmetallization annealing (PMA)
thin-film transistor (TFT)
Issue Date2018
Citation
IEEE Transactions on Electron Devices, 2018, v. 65, p. 1009-1013 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2018.2797073
Persistent Identifierhttp://hdl.handle.net/10722/261764
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000425996300028

 

DC FieldValueLanguage
dc.contributor.authorHuang, XD-
dc.contributor.authorMA, Y-
dc.contributor.authorSONG, J-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2018-09-28T04:47:29Z-
dc.date.available2018-09-28T04:47:29Z-
dc.date.issued2018-
dc.identifier.citationIEEE Transactions on Electron Devices, 2018, v. 65, p. 1009-1013-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/261764-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectInGaZnO (IGZO)-
dc.subjectInO-
dc.subjectmetal-hydroxyl (M-OH)-
dc.subjectpostmetallization annealing (PMA)-
dc.subjectthin-film transistor (TFT)-
dc.titleEffects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2018.2797073-
dc.identifier.scopuseid_2-s2.0-85041545203-
dc.identifier.hkuros292228-
dc.identifier.volume65-
dc.identifier.spage1009-
dc.identifier.epage1013-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000425996300028-
dc.identifier.issnl0018-9383-

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