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Article: High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric

TitleHigh-performance pentacene OTFT by incorporating Ti in LaON gate dielectric
Authors
Issue Date2017
PublisherAIP Publishing LLC. The Journal's web site is located at http://scitation.aip.org/content/aip/journal/apl
Citation
Applied Physics Letters, 2017, v. 111 n. 2, article no. 023501 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/262325
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMA, Y-
dc.contributor.authorHan, CY-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2018-09-28T04:57:24Z-
dc.date.available2018-09-28T04:57:24Z-
dc.date.issued2017-
dc.identifier.citationApplied Physics Letters, 2017, v. 111 n. 2, article no. 023501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/262325-
dc.languageeng-
dc.publisherAIP Publishing LLC. The Journal's web site is located at http://scitation.aip.org/content/aip/journal/apl-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2017, v. 111 n. 2, article no. 023501 and may be found at https://doi.org/10.1063/1.4993157-
dc.titleHigh-performance pentacene OTFT by incorporating Ti in LaON gate dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4993157-
dc.identifier.scopuseid_2-s2.0-85023748354-
dc.identifier.hkuros292204-
dc.identifier.volume111-
dc.identifier.issue2-
dc.identifier.spagearticle no. 023501-
dc.identifier.epagearticle no. 023501-
dc.identifier.isiWOS:000405661700049-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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