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Article: Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

TitleImprovements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation
Authors
Huang, YXu, JPLiu, LCheng, ZXLai, PTTang, WM
KeywordsFluorine-plasma treatment
Ge metal-oxide-semiconductor (MOS)
interface properties
TaYON passivation layer
Issue Date2017
Citation
IEEE Transactions on Electron Devices, 2017, v. 64, p. 3528-3533 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2017.2723886
Persistent Identifierhttp://hdl.handle.net/10722/262326
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000408118700001

 

DC FieldValueLanguage
dc.contributor.authorHuang, Y-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorCheng, ZX-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2018-09-28T04:57:24Z-
dc.date.available2018-09-28T04:57:24Z-
dc.date.issued2017-
dc.identifier.citationIEEE Transactions on Electron Devices, 2017, v. 64, p. 3528-3533-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/262326-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectFluorine-plasma treatment-
dc.subjectGe metal-oxide-semiconductor (MOS)-
dc.subjectinterface properties-
dc.subjectTaYON passivation layer-
dc.titleImprovements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2017.2723886-
dc.identifier.scopuseid_2-s2.0-85028755215-
dc.identifier.hkuros292208-
dc.identifier.volume64-
dc.identifier.spage3528-
dc.identifier.epage3533-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000408118700001-
dc.identifier.issnl0018-9383-

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