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Article: Novel Molecular Doping Mechanism for n‐Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells

TitleNovel Molecular Doping Mechanism for n‐Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells
Authors
Keywordsdelocalized electrons
molecular doping
n-type
perovskite solar cells
SnO2
Issue Date2019
PublisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089
Citation
Advanced Materials, 2019, v. 31 n. 15, p. 1805944:1-1805944:9 How to Cite?
AbstractMolecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n‐type doping of oxide semiconductors. Herein, successful n‐type doping of SnO2 is demonstrated by a simple, air‐robust, and cost‐effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P+O−σ‐bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi‐photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO2, which enlarges the built‐in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO2/perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%
Persistent Identifierhttp://hdl.handle.net/10722/271263
ISSN
2019 Impact Factor: 27.398
2015 SCImago Journal Rankings: 9.021
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTu, B-
dc.contributor.authorShao, Y-
dc.contributor.authorChen, W-
dc.contributor.authorWu, Y-
dc.contributor.authorLi, X-
dc.contributor.authorHe, Y-
dc.contributor.authorLi, J-
dc.contributor.authorLiu, F-
dc.contributor.authorZhang, Z-
dc.contributor.authorLin, Y-
dc.contributor.authorLan, X-
dc.contributor.authorXu, L-
dc.contributor.authorShi, X-
dc.contributor.authorNg, AMC-
dc.contributor.authorLi, H-
dc.contributor.authorChung, LW-
dc.contributor.authorDjurisic, AB-
dc.contributor.authorHe, Z-
dc.date.accessioned2019-06-24T01:06:31Z-
dc.date.available2019-06-24T01:06:31Z-
dc.date.issued2019-
dc.identifier.citationAdvanced Materials, 2019, v. 31 n. 15, p. 1805944:1-1805944:9-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/271263-
dc.description.abstractMolecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n‐type doping of oxide semiconductors. Herein, successful n‐type doping of SnO2 is demonstrated by a simple, air‐robust, and cost‐effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P+O−σ‐bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi‐photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO2, which enlarges the built‐in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO2/perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%-
dc.languageeng-
dc.publisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089-
dc.relation.ispartofAdvanced Materials-
dc.rightsThis is the peer reviewed version of the following article: Advanced Materials, 2019, v. 31 n. 15, p. 1805944:1-1805944:9, which has been published in final form at https://doi.org/10.1002/adma.201805944. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.-
dc.subjectdelocalized electrons-
dc.subjectmolecular doping-
dc.subjectn-type-
dc.subjectperovskite solar cells-
dc.subjectSnO2-
dc.titleNovel Molecular Doping Mechanism for n‐Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells-
dc.typeArticle-
dc.identifier.emailLiu, F: liufz@hku.hk-
dc.identifier.emailDjurisic, AB: dalek@hku.hk-
dc.identifier.authorityDjurisic, AB=rp00690-
dc.description.naturepostprint-
dc.identifier.doi10.1002/adma.201805944-
dc.identifier.scopuseid_2-s2.0-85060804819-
dc.identifier.hkuros298004-
dc.identifier.volume31-
dc.identifier.issue15-
dc.identifier.spage1805944:1-
dc.identifier.epage1805944:9-
dc.identifier.isiWOS:000468033400004-
dc.publisher.placeGermany-
dc.identifier.issnl0935-9648-

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