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Article: Maximization of transporting bands for high-performance SnTe alloy thermoelectrics

TitleMaximization of transporting bands for high-performance SnTe alloy thermoelectrics
Authors
Issue Date2019
PublisherElsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics
Citation
Materials Today Physics, 2019, v. 9, article no. 100091 How to Cite?
AbstractEnvironment-friendly thermoelectric SnTe has recently attracted much attention as a top candidate for replacing conventional p-type PbTe. Effective strategies leading to great advancements in this material are typified by manipulation of valence bands and chemical defects, among of which MgTe- and Cu2Te-alloying are particularly successful, respectively, for valence band convergence and lattice thermal conductivity minimization. However, pristine SnTe enables a MgTe solubility of only ∼12%, which might limit the full convergence of possibly transporting bands for an electronic performance maximization. In this work, we show an approach to increase the MgTe solubility up to ∼20%, leading to an involvement of one more highly degenerated valence band Λ for charge transport in addition to existing L and Σ bands. Such a collection of many transporting valence bands enables a great improvement in electronic performance, as well as a significant enhancement in thermoelectric figure of merit with a well-reduced lattice thermal conductivity by the point defects introduced in these SnTe alloys.
Persistent Identifierhttp://hdl.handle.net/10722/272249
ISSN

 

DC FieldValueLanguage
dc.contributor.authorTang, J-
dc.contributor.authorYao, Z-
dc.contributor.authorChen, Z-
dc.contributor.authorLin, S-
dc.contributor.authorZhang, X-
dc.contributor.authorXiong, F-
dc.contributor.authorLi, W-
dc.contributor.authorChen, Y-
dc.contributor.authorPei, Y-
dc.date.accessioned2019-07-20T10:38:35Z-
dc.date.available2019-07-20T10:38:35Z-
dc.date.issued2019-
dc.identifier.citationMaterials Today Physics, 2019, v. 9, article no. 100091-
dc.identifier.issn2542-5293-
dc.identifier.urihttp://hdl.handle.net/10722/272249-
dc.description.abstractEnvironment-friendly thermoelectric SnTe has recently attracted much attention as a top candidate for replacing conventional p-type PbTe. Effective strategies leading to great advancements in this material are typified by manipulation of valence bands and chemical defects, among of which MgTe- and Cu2Te-alloying are particularly successful, respectively, for valence band convergence and lattice thermal conductivity minimization. However, pristine SnTe enables a MgTe solubility of only ∼12%, which might limit the full convergence of possibly transporting bands for an electronic performance maximization. In this work, we show an approach to increase the MgTe solubility up to ∼20%, leading to an involvement of one more highly degenerated valence band Λ for charge transport in addition to existing L and Σ bands. Such a collection of many transporting valence bands enables a great improvement in electronic performance, as well as a significant enhancement in thermoelectric figure of merit with a well-reduced lattice thermal conductivity by the point defects introduced in these SnTe alloys.-
dc.languageeng-
dc.publisherElsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics-
dc.relation.ispartofMaterials Today Physics-
dc.titleMaximization of transporting bands for high-performance SnTe alloy thermoelectrics-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.mtphys.2019.03.005-
dc.identifier.scopuseid_2-s2.0-85064948759-
dc.identifier.hkuros298979-
dc.identifier.volume9-
dc.identifier.spagearticle no. 100091-
dc.identifier.epagearticle no. 100091-
dc.publisher.placeUnited Kingdom-

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