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Article: Solution-Processed Metal Oxide Nanocrystals as Carrier Transport Layers in Organic and Perovskite Solar Cells

TitleSolution-Processed Metal Oxide Nanocrystals as Carrier Transport Layers in Organic and Perovskite Solar Cells
Authors
KeywordsCarrier transport layers
Metal oxides
Nanocrystals
Organic solar cells
Perovskite solar cells
Issue Date2019
PublisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm
Citation
Advanced Functional Materials, 2019, v. 29 n. 1, article no. 1804660 How to Cite?
AbstractThere has been rapid progress in solution‐processed organic solar cells (OSCs) and perovskite solar cells (PVSCs) toward low‐cost and high‐throughput photovoltaic technology. Carrier (electron and hole) transport layers (CTLs) play a critical role in boosting their efficiency and long‐time stability. Solution‐processed metal oxide nanocrystals (SMONCs) as a promising CTL candidate, featuring robust process conditions, low‐cost, tunable optoelectronic properties, and intrinsic stability, offer unique advantages for realizing cost‐effective, high‐performance, large‐area, and mechanically flexible photovoltaic devices. In this review, the recent development of SMONC‐based CTLs in OSCs and PVSCs is summarized. This paper starts with the discussion of synthesis approaches of SMONCs. Then, a broad range of SMONC‐based CTLs, including hole transport layers and electron transport layers, are reviewed, in which an emphasis is placed on the improvement of the efficiency and device stability. Finally, for the better understanding of the challenges and opportunities on SMONC‐based CTLs, several strategies and perspectives are outlined.
Persistent Identifierhttp://hdl.handle.net/10722/275003
ISSN
2019 Impact Factor: 16.836
2015 SCImago Journal Rankings: 5.210
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorOuyang, D-
dc.contributor.authorHuang, Z-
dc.contributor.authorChoy, WCH-
dc.date.accessioned2019-09-10T02:33:26Z-
dc.date.available2019-09-10T02:33:26Z-
dc.date.issued2019-
dc.identifier.citationAdvanced Functional Materials, 2019, v. 29 n. 1, article no. 1804660-
dc.identifier.issn1616-301X-
dc.identifier.urihttp://hdl.handle.net/10722/275003-
dc.description.abstractThere has been rapid progress in solution‐processed organic solar cells (OSCs) and perovskite solar cells (PVSCs) toward low‐cost and high‐throughput photovoltaic technology. Carrier (electron and hole) transport layers (CTLs) play a critical role in boosting their efficiency and long‐time stability. Solution‐processed metal oxide nanocrystals (SMONCs) as a promising CTL candidate, featuring robust process conditions, low‐cost, tunable optoelectronic properties, and intrinsic stability, offer unique advantages for realizing cost‐effective, high‐performance, large‐area, and mechanically flexible photovoltaic devices. In this review, the recent development of SMONC‐based CTLs in OSCs and PVSCs is summarized. This paper starts with the discussion of synthesis approaches of SMONCs. Then, a broad range of SMONC‐based CTLs, including hole transport layers and electron transport layers, are reviewed, in which an emphasis is placed on the improvement of the efficiency and device stability. Finally, for the better understanding of the challenges and opportunities on SMONC‐based CTLs, several strategies and perspectives are outlined.-
dc.languageeng-
dc.publisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm-
dc.relation.ispartofAdvanced Functional Materials-
dc.subjectCarrier transport layers-
dc.subjectMetal oxides-
dc.subjectNanocrystals-
dc.subjectOrganic solar cells-
dc.subjectPerovskite solar cells-
dc.titleSolution-Processed Metal Oxide Nanocrystals as Carrier Transport Layers in Organic and Perovskite Solar Cells-
dc.typeArticle-
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hk-
dc.identifier.authorityChoy, WCH=rp00218-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adfm.201804660-
dc.identifier.scopuseid_2-s2.0-85056453974-
dc.identifier.hkuros302836-
dc.identifier.volume29-
dc.identifier.issue1-
dc.identifier.spagearticle no. 1804660-
dc.identifier.epagearticle no. 1804660-
dc.identifier.isiWOS:000454703900028-
dc.publisher.placeGermany-

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