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Article: Intensity-Stabilized LEDs With Monolithically Integrated Photodetectors

TitleIntensity-Stabilized LEDs With Monolithically Integrated Photodetectors
Authors
KeywordsGallium nitride
Light-emitting diode (LED)
Monolithic integration
Photodetector (PD)
Issue Date2019
PublisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=41
Citation
IEEE Transactions on Industrial Electronics, 2019, v. 66 n. 9, p. 7426-7432 How to Cite?
AbstractTo overcome light output degradations and fluctuations of intensities from light-emitting diodes (LEDs) over time, the monolithic integration of InGaN LEDs and photodetectors (PDs) is demonstrated in this paper. The InGaN/GaN multiquantum wells (MQWs) play the role of light emission and detection from the LED and PD, respectively. Despite the larger bandgap energies of the InGaN layers, the MQWs absorb light emitted by the LED due to the band tail effect, extending the absorption range up to 460 nm, which correspond to the peak wavelength of emission. The tiny-sized PD detects light from the adjacent LED coupled through the sapphire substrate to generate a photocurrent that is proportional to its light output, but remains unresponsive to ambient lighting. Apart from real-time light output monitoring, the photocurrent can be used as a feedback signal for regulation of light output. A microcontroller-based feedback circuit has been implemented to drive the LED and the photocurrent level is maintained to a preset value by adjustment of the driving current. Using this scheme, light output from the LED is stabilized to within ~0.2% over 1-h periods.
Persistent Identifierhttp://hdl.handle.net/10722/275019
ISSN
2019 Impact Factor: 7.515
2015 SCImago Journal Rankings: 3.285
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, KH-
dc.contributor.authorLu, H-
dc.contributor.authorFu, WY-
dc.contributor.authorCheung, YF-
dc.contributor.authorChoi, HW-
dc.date.accessioned2019-09-10T02:33:47Z-
dc.date.available2019-09-10T02:33:47Z-
dc.date.issued2019-
dc.identifier.citationIEEE Transactions on Industrial Electronics, 2019, v. 66 n. 9, p. 7426-7432-
dc.identifier.issn0278-0046-
dc.identifier.urihttp://hdl.handle.net/10722/275019-
dc.description.abstractTo overcome light output degradations and fluctuations of intensities from light-emitting diodes (LEDs) over time, the monolithic integration of InGaN LEDs and photodetectors (PDs) is demonstrated in this paper. The InGaN/GaN multiquantum wells (MQWs) play the role of light emission and detection from the LED and PD, respectively. Despite the larger bandgap energies of the InGaN layers, the MQWs absorb light emitted by the LED due to the band tail effect, extending the absorption range up to 460 nm, which correspond to the peak wavelength of emission. The tiny-sized PD detects light from the adjacent LED coupled through the sapphire substrate to generate a photocurrent that is proportional to its light output, but remains unresponsive to ambient lighting. Apart from real-time light output monitoring, the photocurrent can be used as a feedback signal for regulation of light output. A microcontroller-based feedback circuit has been implemented to drive the LED and the photocurrent level is maintained to a preset value by adjustment of the driving current. Using this scheme, light output from the LED is stabilized to within ~0.2% over 1-h periods.-
dc.languageeng-
dc.publisherInstitute of Electrical and Electronics Engineers. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=41-
dc.relation.ispartofIEEE Transactions on Industrial Electronics-
dc.subjectGallium nitride-
dc.subjectLight-emitting diode (LED)-
dc.subjectMonolithic integration-
dc.subjectPhotodetector (PD)-
dc.titleIntensity-Stabilized LEDs With Monolithically Integrated Photodetectors-
dc.typeArticle-
dc.identifier.emailLi, KH: khei@hku.hk-
dc.identifier.emailLu, H: haitaolu@connect.hku.hk-
dc.identifier.emailFu, WY: wyfu@hku.hk-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.authorityChoi, HW=rp00108-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TIE.2018.2873522-
dc.identifier.scopuseid_2-s2.0-85054488760-
dc.identifier.hkuros303050-
dc.identifier.volume66-
dc.identifier.issue9-
dc.identifier.spage7426-
dc.identifier.epage7432-
dc.identifier.isiWOS:000467010400078-
dc.publisher.placeUnited States-

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