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Conference Paper: Designing microstructures for bandgap manipulation of InGaN Quantum Wells by k.p simulation coupled with molecular dynamics

TitleDesigning microstructures for bandgap manipulation of InGaN Quantum Wells by k.p simulation coupled with molecular dynamics
Authors
Fu, WYChoi, HW
KeywordsIII-Nitride
Molecular Dynamics
Quantum wells
Issue Date2018
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000510
Citation
Proceedings of the 18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018), Hong Kong, China, 5-9 November 2018, p. 101-102 How to Cite?
DOI: http://dx.doi.org/10.1109/NUSOD.2018.8570276
AbstractIn this work, we present the design of InGaN microstructures by manipulation of quantum well bandgap via strain engineering. By coupling strain field extracted from molecular dynamics simulation to k.p simulation, we are able to associate the effect of geometry and strain of a structure to its light emission.
Persistent Identifierhttp://hdl.handle.net/10722/275282
ISBN
9781538655993
ISI Accession Number ID
WOS:000458689000051

 

DC FieldValueLanguage
dc.contributor.authorFu, WY-
dc.contributor.authorChoi, HW-
dc.date.accessioned2019-09-10T02:39:22Z-
dc.date.available2019-09-10T02:39:22Z-
dc.date.issued2018-
dc.identifier.citationProceedings of the 18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018), Hong Kong, China, 5-9 November 2018, p. 101-102-
dc.identifier.isbn9781538655993-
dc.identifier.urihttp://hdl.handle.net/10722/275282-
dc.description.abstractIn this work, we present the design of InGaN microstructures by manipulation of quantum well bandgap via strain engineering. By coupling strain field extracted from molecular dynamics simulation to k.p simulation, we are able to associate the effect of geometry and strain of a structure to its light emission.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000510-
dc.relation.ispartofProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices-
dc.rights©2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectIII-Nitride-
dc.subjectMolecular Dynamics-
dc.subjectQuantum wells-
dc.titleDesigning microstructures for bandgap manipulation of InGaN Quantum Wells by k.p simulation coupled with molecular dynamics-
dc.typeConference_Paper-
dc.identifier.emailFu, WYG: wyfu@hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.description.naturepostprint-
dc.identifier.doi10.1109/NUSOD.2018.8570276-
dc.identifier.scopuseid_2-s2.0-85060022818-
dc.identifier.hkuros305155-
dc.identifier.hkuros303056-
dc.identifier.spage101-
dc.identifier.epage102-
dc.identifier.isiWOS:000458689000051-
dc.publisher.placeUnited States-

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