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Article: Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric

TitleEffects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric
Authors
KeywordsAtomic layer deposition
Electric field effects
Field effect transistors
Gate dielectrics
Hafnium oxides
Issue Date2018
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2018, v. 29 n. 34, p. article no. 345201 How to Cite?
AbstractThe carrier mobility of MoS2 transistors can be greatly improved by the screening role of high-k gate dielectric. In this work, atomic-layer deposited (ALD) HfO2 annealed in NH3 is used to replace SiO2 as the gate dielectric to fabricate back-gated few-layered MoS2 transistors, and good electrical properties are achieved with field-effect mobility (μ) of 19.1 cm2 V–1 s–1, subthreshold swing (SS) of 123.6 mV dec–1 and on/off ratio of 3.76 × 105. Furthermore, enhanced device performance is obtained when the surface of the MoS2 channel is coated by an ALD HfO2 layer with different thicknesses (10, 15 and 20 nm), where the transistor with a 15 nm HfO2 encapsulation layer exhibits the best overall electrical properties: μ = 42.1 cm2 V–1 s–1, SS = 87.9 mV dec–1 and on/off ratio of 2.72 × 106. These improvements should be associated with the enhanced screening effect on charged-impurity scattering and protection from absorption of environmental gas molecules by the high-k encapsulation. The capacitance equivalent thickness of the back-gate dielectric (HfO2) is only 6.58 nm, which is conducive to scaling of the MoS2 transistors.
Persistent Identifierhttp://hdl.handle.net/10722/278162
ISSN
2019 Impact Factor: 3.551
2015 SCImago Journal Rankings: 1.196

 

DC FieldValueLanguage
dc.contributor.authorXU, J-
dc.contributor.authorWEN, M-
dc.contributor.authorZHAO, X-
dc.contributor.authorLIU, L-
dc.contributor.authorSONG, X-
dc.contributor.authorLai, PT-
dc.contributor.authorTANG, WM-
dc.date.accessioned2019-10-04T08:08:40Z-
dc.date.available2019-10-04T08:08:40Z-
dc.date.issued2018-
dc.identifier.citationNanotechnology, 2018, v. 29 n. 34, p. article no. 345201-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/278162-
dc.description.abstractThe carrier mobility of MoS2 transistors can be greatly improved by the screening role of high-k gate dielectric. In this work, atomic-layer deposited (ALD) HfO2 annealed in NH3 is used to replace SiO2 as the gate dielectric to fabricate back-gated few-layered MoS2 transistors, and good electrical properties are achieved with field-effect mobility (μ) of 19.1 cm2 V–1 s–1, subthreshold swing (SS) of 123.6 mV dec–1 and on/off ratio of 3.76 × 105. Furthermore, enhanced device performance is obtained when the surface of the MoS2 channel is coated by an ALD HfO2 layer with different thicknesses (10, 15 and 20 nm), where the transistor with a 15 nm HfO2 encapsulation layer exhibits the best overall electrical properties: μ = 42.1 cm2 V–1 s–1, SS = 87.9 mV dec–1 and on/off ratio of 2.72 × 106. These improvements should be associated with the enhanced screening effect on charged-impurity scattering and protection from absorption of environmental gas molecules by the high-k encapsulation. The capacitance equivalent thickness of the back-gate dielectric (HfO2) is only 6.58 nm, which is conducive to scaling of the MoS2 transistors.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano-
dc.relation.ispartofNanotechnology-
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectAtomic layer deposition-
dc.subjectElectric field effects-
dc.subjectField effect transistors-
dc.subjectGate dielectrics-
dc.subjectHafnium oxides-
dc.titleEffects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6528/aac853-
dc.identifier.pmid29808825-
dc.identifier.scopuseid_2-s2.0-85049342452-
dc.identifier.hkuros306903-
dc.identifier.volume29-
dc.identifier.issue34-
dc.identifier.spagearticle no. 345201-
dc.identifier.epagearticle no. 345201-
dc.publisher.placeUnited Kingdom-

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