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Article: Tailoring the Band Alignment of GaxZn1‐xO/InGaZnO Heterojunction for Modulation‐Doped Transistor Applications

TitleTailoring the Band Alignment of GaxZn1‐xO/InGaZnO Heterojunction for Modulation‐Doped Transistor Applications
Authors
Keywordsband bending
GaxZn1‐xO
high‐electron‐mobility transistors
InGaZnO
two‐dimensional electron gas
Issue Date2018
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319
Citation
Physica Status Solidi A: Applications and Materials Science, 2018, v. 215 n. 18, p. article no. 1800332 How to Cite?
AbstractIn this work, the band alignments of GxZ1‐xOy/a‐IGZO heterojunctions with different Ga contents (x) are investigated by X‐ray photoelectron spectroscopy (XPS). It is found that for increasing Ga content, the valence‐band offset is monotonically reduced, whereas the conduction‐band offset is continuously increased. Moreover, the band alignment changes from type I to II. The variation of band alignment is mainly attributed to the band bending at the interface of the heterojunction, which can be traced back to oxygen vacancies for higher Ga content, rather than enlarged bandgap. As a result, G0.47Z0.53O1.14/a‐IGZO heterojunction exhibites a more ideal band alignment structure, which can favor the formation of two‐dimensional electron gas. In summary, it is found that the band alignment of GxZ1‐xOy/a‐IGZO heterojunction can be effectively tailored by its Ga content, thus providing a method to achieve high‐performance a‐IGZO‐based modulation‐doped transistors.
Persistent Identifierhttp://hdl.handle.net/10722/278163
ISSN
2020 Impact Factor: 1.981
2020 SCImago Journal Rankings: 0.532
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZHANG, YY-
dc.contributor.authorQIAN, LX-
dc.contributor.authorGE, WB-
dc.contributor.authorLai, PT-
dc.contributor.authorLIU, XZ-
dc.date.accessioned2019-10-04T08:08:42Z-
dc.date.available2019-10-04T08:08:42Z-
dc.date.issued2018-
dc.identifier.citationPhysica Status Solidi A: Applications and Materials Science, 2018, v. 215 n. 18, p. article no. 1800332-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/10722/278163-
dc.description.abstractIn this work, the band alignments of GxZ1‐xOy/a‐IGZO heterojunctions with different Ga contents (x) are investigated by X‐ray photoelectron spectroscopy (XPS). It is found that for increasing Ga content, the valence‐band offset is monotonically reduced, whereas the conduction‐band offset is continuously increased. Moreover, the band alignment changes from type I to II. The variation of band alignment is mainly attributed to the band bending at the interface of the heterojunction, which can be traced back to oxygen vacancies for higher Ga content, rather than enlarged bandgap. As a result, G0.47Z0.53O1.14/a‐IGZO heterojunction exhibites a more ideal band alignment structure, which can favor the formation of two‐dimensional electron gas. In summary, it is found that the band alignment of GxZ1‐xOy/a‐IGZO heterojunction can be effectively tailored by its Ga content, thus providing a method to achieve high‐performance a‐IGZO‐based modulation‐doped transistors.-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319-
dc.relation.ispartofPhysica Status Solidi A: Applications and Materials Science-
dc.rightsThis is the peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article using the DOI]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.-
dc.subjectband bending-
dc.subjectGaxZn1‐xO-
dc.subjecthigh‐electron‐mobility transistors-
dc.subjectInGaZnO-
dc.subjecttwo‐dimensional electron gas-
dc.titleTailoring the Band Alignment of GaxZn1‐xO/InGaZnO Heterojunction for Modulation‐Doped Transistor Applications-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssa.201800332-
dc.identifier.scopuseid_2-s2.0-85053469573-
dc.identifier.hkuros306904-
dc.identifier.volume215-
dc.identifier.issue18-
dc.identifier.spagearticle no. 1800332-
dc.identifier.epagearticle no. 1800332-
dc.identifier.isiWOS:000444958600021-
dc.publisher.placeGermany-
dc.identifier.issnl1862-6300-

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