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Conference Paper: GaN monolithic integration for lighting and display

TitleGaN monolithic integration for lighting and display
Authors
Issue Date2019
PublisherSPIE - International Society for Optical Engineering. The Proceedings' web site is located at https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10918.toc
Citation
Proceedings of SPIE Photonics West: Gallium Nitride Materials and Devices 2019, San Francisco, USA, 4-7 February 2019, v. 10918, paper no. 109181O How to Cite?
AbstractLight-emitting diodes based on InGaN/GaN quantum wells are widely used for lighting and display applications. However, such LEDs are monochromatic with relatively narrow spectral line-widths and without color-tuning capabilities. In order to use them for lighting, additional color-conversion material, typically phosphor, is needed. For display applications, multiple chips are required for color-tuning. The highly-strained nature of the InGaN/GaN wells due to lattice and thermal mismatch, especially for those of longer emission wavelengths, offer a viable way of wavelength tuning. Through dimensional downsizing of the emitters, the emission wavelengths can be blue-shifted via the strain-relaxation effect. Such wavelength tuning techniques can be exploited for the development of monolithic broadband LEDs for lighting, as well as RGB pixelated arrays for display applications, potentially offering improvements to performances, as well as manufacturing costs and yields.
DescriptionVolume 10918 title: Gallium Nitride Materials and Devices XIV
Persistent Identifierhttp://hdl.handle.net/10722/279230

 

DC FieldValueLanguage
dc.contributor.authorChoi, HW-
dc.contributor.authorFu, WY-
dc.contributor.authorLi, KH-
dc.contributor.authorCheung, YF-
dc.date.accessioned2019-10-22T04:44:25Z-
dc.date.available2019-10-22T04:44:25Z-
dc.date.issued2019-
dc.identifier.citationProceedings of SPIE Photonics West: Gallium Nitride Materials and Devices 2019, San Francisco, USA, 4-7 February 2019, v. 10918, paper no. 109181O-
dc.identifier.urihttp://hdl.handle.net/10722/279230-
dc.descriptionVolume 10918 title: Gallium Nitride Materials and Devices XIV-
dc.description.abstractLight-emitting diodes based on InGaN/GaN quantum wells are widely used for lighting and display applications. However, such LEDs are monochromatic with relatively narrow spectral line-widths and without color-tuning capabilities. In order to use them for lighting, additional color-conversion material, typically phosphor, is needed. For display applications, multiple chips are required for color-tuning. The highly-strained nature of the InGaN/GaN wells due to lattice and thermal mismatch, especially for those of longer emission wavelengths, offer a viable way of wavelength tuning. Through dimensional downsizing of the emitters, the emission wavelengths can be blue-shifted via the strain-relaxation effect. Such wavelength tuning techniques can be exploited for the development of monolithic broadband LEDs for lighting, as well as RGB pixelated arrays for display applications, potentially offering improvements to performances, as well as manufacturing costs and yields.-
dc.languageeng-
dc.publisherSPIE - International Society for Optical Engineering. The Proceedings' web site is located at https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10918.toc-
dc.relation.ispartofSPIE Photonics West: Gallium Nitride Materials and Devices XIV, 10918-
dc.rightsSPIE Photonics West: Gallium Nitride Materials and Devices XIV, 10918. Copyright © SPIE - International Society for Optical Engineering.-
dc.titleGaN monolithic integration for lighting and display-
dc.typeConference_Paper-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailFu, WY: wyfu@hku.hk-
dc.identifier.emailLi, KH: khei@eee.hku.hk-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.doi10.1117/12.2507699-
dc.identifier.hkuros303057-
dc.identifier.volume10918-
dc.identifier.spage109181O-
dc.identifier.epage109181O-
dc.publisher.placeUnited States-

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