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Article: Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

TitleManipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe
Authors
Keywordsband structure
interstitial defects
thermoelectrics
Issue Date2018
PublisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm
Citation
Advanced Functional Materials, 2018, v. 28 n. 34, p. article no. 1803586 How to Cite?
AbstractMany efforts are recently devoted on improving thermoelectric SnTe as an environment—friendly alternative to conventional PbTe and successful approaches include valence band convergence, nanostructuring, and substantial/interstitial defects. Among these strategies, alloying SnTe with MnTe enables the most effective reduction in the valence band offset (between L and Σ) for a convergence due to its high solubility of ≈15%, yet there is no indication that the solubility of MnTe is high enough for fully optimizing the valence band structure and thus for maximizing the electronic performance. Here, a strategy is shown to increase the MnTe solubility up to ≈25% by alloying with 5% GeTe, which successfully locates the composition (20% MnTe) to optimize the valence band structure by converging a more degenerated Λ (as compared with band L) and Σ valence bands. Through a further alloying with Cu2Te, the resultant Cu‐interstitial defects enable a sufficient reduction in lattice thermal conductivity to its amorphous limit (0.4 W m−1 K−1). These electronic and thermal effects successfully realize a record‐high thermoelectric figure of merit, zT of 1.8, strongly competing with that of PbTe. This work demonstrates the validity of band manipulation and interstitial defects for realizing extraordinary thermoelectric performance in SnTe.
Persistent Identifierhttp://hdl.handle.net/10722/279986
ISSN
2017 Impact Factor: 13.325
2015 SCImago Journal Rankings: 5.210

 

DC FieldValueLanguage
dc.contributor.authorTang, J-
dc.contributor.authorGao, B-
dc.contributor.authorLin, S-
dc.contributor.authorLi, J-
dc.contributor.authorChen, Z-
dc.contributor.authorXIONG, F-
dc.contributor.authorLi, W-
dc.contributor.authorChen, Y-
dc.contributor.authorPei, Y-
dc.date.accessioned2019-12-23T08:24:37Z-
dc.date.available2019-12-23T08:24:37Z-
dc.date.issued2018-
dc.identifier.citationAdvanced Functional Materials, 2018, v. 28 n. 34, p. article no. 1803586-
dc.identifier.issn1616-301X-
dc.identifier.urihttp://hdl.handle.net/10722/279986-
dc.description.abstractMany efforts are recently devoted on improving thermoelectric SnTe as an environment—friendly alternative to conventional PbTe and successful approaches include valence band convergence, nanostructuring, and substantial/interstitial defects. Among these strategies, alloying SnTe with MnTe enables the most effective reduction in the valence band offset (between L and Σ) for a convergence due to its high solubility of ≈15%, yet there is no indication that the solubility of MnTe is high enough for fully optimizing the valence band structure and thus for maximizing the electronic performance. Here, a strategy is shown to increase the MnTe solubility up to ≈25% by alloying with 5% GeTe, which successfully locates the composition (20% MnTe) to optimize the valence band structure by converging a more degenerated Λ (as compared with band L) and Σ valence bands. Through a further alloying with Cu2Te, the resultant Cu‐interstitial defects enable a sufficient reduction in lattice thermal conductivity to its amorphous limit (0.4 W m−1 K−1). These electronic and thermal effects successfully realize a record‐high thermoelectric figure of merit, zT of 1.8, strongly competing with that of PbTe. This work demonstrates the validity of band manipulation and interstitial defects for realizing extraordinary thermoelectric performance in SnTe.-
dc.languageeng-
dc.publisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm-
dc.relation.ispartofAdvanced Functional Materials-
dc.rightsThis is the peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article using the DOI]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.-
dc.subjectband structure-
dc.subjectinterstitial defects-
dc.subjectthermoelectrics-
dc.titleManipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adfm.201803586-
dc.identifier.scopuseid_2-s2.0-85051269885-
dc.identifier.hkuros308780-
dc.identifier.volume28-
dc.identifier.issue34-
dc.identifier.spagearticle no. 1803586-
dc.identifier.epagearticle no. 1803586-
dc.publisher.placeGermany-

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