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Article: Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2−MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy

TitleMultifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2−MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy
Authors
Keywordsheterojunction
TMDs
band alignment
segregation
alloying
Issue Date2019
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
ACS Applied Materials & Interfaces, 2019, v. 11 n. 46, p. 43766-43773 How to Cite?
AbstractMonolayer (ML) transition-metal dichalcogenides (TMDs) continue to attract research attention, and the heterojunctions formed by vertically stacking or laterally stitching two different TMDs, e.g., MoSe2 and WSe2, may have many interesting electronic and optical properties and thus are at the center stage of current research. Experimentally realizing such heterojunctions with desired interface morphologies and electronic properties is of great demand. In this work, we report a diverse interface structure in molecular-beam epitaxial WSe2–MoSe2 heterojunction. The corresponding electronic bands show type-II band alignment for both monolayer ML−ML and ML–bilayer lateral junctions irrespective of the presence or absence of step states. Interestingly, a strong anisotropy in lateral heterojunction formation is observed, where sharp interfaces are obtained only when WSe2 deposition precedes MoSe2. Reversing the deposition order leads to alloying of the two materials without a notable boundary. This is explained by a step segregation process as suggested by the first-principles total energy calculations.
Persistent Identifierhttp://hdl.handle.net/10722/280006
ISSN
2017 Impact Factor: 8.097
2015 SCImago Journal Rankings: 2.381

 

DC FieldValueLanguage
dc.contributor.authorDAI, Y-
dc.contributor.authorRen, X-
dc.contributor.authorZhang, J-
dc.contributor.authorLiu, J-
dc.contributor.authorLiu, H-
dc.contributor.authorHo, W-
dc.contributor.authorDai, X-
dc.contributor.authorJin, C-
dc.contributor.authorXie, M-
dc.date.accessioned2019-12-23T08:24:53Z-
dc.date.available2019-12-23T08:24:53Z-
dc.date.issued2019-
dc.identifier.citationACS Applied Materials & Interfaces, 2019, v. 11 n. 46, p. 43766-43773-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/280006-
dc.description.abstractMonolayer (ML) transition-metal dichalcogenides (TMDs) continue to attract research attention, and the heterojunctions formed by vertically stacking or laterally stitching two different TMDs, e.g., MoSe2 and WSe2, may have many interesting electronic and optical properties and thus are at the center stage of current research. Experimentally realizing such heterojunctions with desired interface morphologies and electronic properties is of great demand. In this work, we report a diverse interface structure in molecular-beam epitaxial WSe2–MoSe2 heterojunction. The corresponding electronic bands show type-II band alignment for both monolayer ML−ML and ML–bilayer lateral junctions irrespective of the presence or absence of step states. Interestingly, a strong anisotropy in lateral heterojunction formation is observed, where sharp interfaces are obtained only when WSe2 deposition precedes MoSe2. Reversing the deposition order leads to alloying of the two materials without a notable boundary. This is explained by a step segregation process as suggested by the first-principles total energy calculations.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick-
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectheterojunction-
dc.subjectTMDs-
dc.subjectband alignment-
dc.subjectsegregation-
dc.subjectalloying-
dc.titleMultifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2−MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy-
dc.typeArticle-
dc.identifier.emailZhang, J: jqzhang1@HKUCC-COM.hku.hk-
dc.identifier.emailHo, W: howk@hku.hk-
dc.identifier.emailXie, M: physhead@hku.hk-
dc.identifier.authorityXie, M=rp00818-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.9b16189-
dc.identifier.pmid31657201-
dc.identifier.scopuseid_2-s2.0-85074949895-
dc.identifier.hkuros308764-
dc.identifier.volume11-
dc.identifier.issue46-
dc.identifier.spage43766-
dc.identifier.epage43773-
dc.publisher.placeUnited States-

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