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Conference Paper: Bio-Syncretic Light-gated Field-Effect Transistor: Fabrication and Characterization

TitleBio-Syncretic Light-gated Field-Effect Transistor: Fabrication and Characterization
Authors
Issue Date2019
PublisherIEEE. The Journal's web site is located at https://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000487
Citation
2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO), Macao, China, 22-26 July 2019, p. 360-363 How to Cite?
AbstractBiological visual system has many intrinsic functional superiorities, such as small size, high sensitivity and no heat-sink cooling, which are hard to be completely replicated by electromechanical systems. The bio-syncretic design of sensing device with living materials may provide some functional superiorities to those conventional sensing devices, and will have great potential benefits in both biomedical and engineering applications. In this study, we developed a novel bio-syncretic light-gated field-effect transistor (FET), in which optogenetically engineered cells were used as the gate substitute for conventional gate electrode, and the exposure of the cells to light irradiation results in the variation of the transistor's channel current. The bio-syncretic transistor was fabricated by virtue of graphene film and optogenetically engineered cells, and its basic photo-responsive performance was then tested and characterized. This reference-less bio-syncretic transistor has a wide range of potential applications in photodetection and biosensing with good biocompatibility and stability.
Persistent Identifierhttp://hdl.handle.net/10722/282984
ISBN

 

DC FieldValueLanguage
dc.contributor.authorYang, J-
dc.contributor.authorWang, W-
dc.contributor.authorLi, G-
dc.contributor.authorLi, G-
dc.contributor.authorXi, N-
dc.contributor.authorLiu, L-
dc.date.accessioned2020-06-05T06:23:45Z-
dc.date.available2020-06-05T06:23:45Z-
dc.date.issued2019-
dc.identifier.citation2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO), Macao, China, 22-26 July 2019, p. 360-363-
dc.identifier.isbn978-1-7281-2893-1-
dc.identifier.urihttp://hdl.handle.net/10722/282984-
dc.description.abstractBiological visual system has many intrinsic functional superiorities, such as small size, high sensitivity and no heat-sink cooling, which are hard to be completely replicated by electromechanical systems. The bio-syncretic design of sensing device with living materials may provide some functional superiorities to those conventional sensing devices, and will have great potential benefits in both biomedical and engineering applications. In this study, we developed a novel bio-syncretic light-gated field-effect transistor (FET), in which optogenetically engineered cells were used as the gate substitute for conventional gate electrode, and the exposure of the cells to light irradiation results in the variation of the transistor's channel current. The bio-syncretic transistor was fabricated by virtue of graphene film and optogenetically engineered cells, and its basic photo-responsive performance was then tested and characterized. This reference-less bio-syncretic transistor has a wide range of potential applications in photodetection and biosensing with good biocompatibility and stability.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at https://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000487-
dc.relation.ispartofIEEE International Conference on Nanotechnology (IEEE-NANO)-
dc.rightsIEEE International Conference on Nanotechnology (IEEE-NANO). Copyright © IEEE.-
dc.rights©2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleBio-Syncretic Light-gated Field-Effect Transistor: Fabrication and Characterization-
dc.typeConference_Paper-
dc.identifier.emailXi, N: xining@hku.hk-
dc.identifier.authorityXi, N=rp02044-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NANO46743.2019.8993868-
dc.identifier.scopuseid_2-s2.0-85081063949-
dc.identifier.hkuros310084-
dc.identifier.spage360-
dc.identifier.epage363-
dc.publisher.placeUnited States-

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