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Article: Room-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying

TitleRoom-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying
Authors
Keywordsalloyed TMD monolayers
room-temperature valley polarization
valley pseudospin dynamics
spin−orbit engineering
electron−hole exchange interaction
Issue Date2020
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html
Citation
ACS Nano, 2020, v. 14 n. 8, p. 9873-9883 How to Cite?
AbstractRoom-temperature manipulation and processing of information encoded in the electronic valley pseudospin and spin degrees of freedoms lie at the heart of the next technological quantum revolution. In atomically thin layers of transition-metal dichalcogenides (TMDs) with hexagonal lattices, valley-polarized excitations and valley quantum coherence can be generated by simply shining with adequately polarized light. In turn, the polarization states of light can induce topological Hall currents in the absence of an external magnetic field, which underlies the fundamental principle of opto-valleytronics devices. However, demonstration of optical generation of valley polarization at room temperature has remained challenging and not well understood. Here, we demonstrate control of strong valley polarization (valley quantum coherence) at room temperature of up to ∼50% (∼20%) by strategically designing Coulomb forces and spin–orbit interactions in atomically thin TMDs via chalcogenide alloying. We show that tailor making the carrier density and the relative order between optically active (bright) and forbidden (dark) states by key variations on the chalcogenide atom ratio allows full control of valley pseudospin dynamics. Our findings set a comprehensive approach for intrinsic and efficient manipulation of valley pseudospin and spin degree of freedom toward realistic opto-valleytronics devices.
Descriptioneid_2-s2.0-85090079222
Persistent Identifierhttp://hdl.handle.net/10722/287701
ISSN
2019 Impact Factor: 14.588
2015 SCImago Journal Rankings: 7.120

 

DC FieldValueLanguage
dc.contributor.authorLiu, S-
dc.contributor.authorGranados del Águila, A-
dc.contributor.authorLiu, X-
dc.contributor.authorZhu, Y-
dc.contributor.authorHan, Y-
dc.contributor.authorChaturvedi, A-
dc.contributor.authorGong, P-
dc.contributor.authorYu, H-
dc.contributor.authorZhang, H-
dc.contributor.authorYao, W-
dc.contributor.authorXiong, Q-
dc.date.accessioned2020-10-05T12:01:59Z-
dc.date.available2020-10-05T12:01:59Z-
dc.date.issued2020-
dc.identifier.citationACS Nano, 2020, v. 14 n. 8, p. 9873-9883-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/287701-
dc.descriptioneid_2-s2.0-85090079222-
dc.description.abstractRoom-temperature manipulation and processing of information encoded in the electronic valley pseudospin and spin degrees of freedoms lie at the heart of the next technological quantum revolution. In atomically thin layers of transition-metal dichalcogenides (TMDs) with hexagonal lattices, valley-polarized excitations and valley quantum coherence can be generated by simply shining with adequately polarized light. In turn, the polarization states of light can induce topological Hall currents in the absence of an external magnetic field, which underlies the fundamental principle of opto-valleytronics devices. However, demonstration of optical generation of valley polarization at room temperature has remained challenging and not well understood. Here, we demonstrate control of strong valley polarization (valley quantum coherence) at room temperature of up to ∼50% (∼20%) by strategically designing Coulomb forces and spin–orbit interactions in atomically thin TMDs via chalcogenide alloying. We show that tailor making the carrier density and the relative order between optically active (bright) and forbidden (dark) states by key variations on the chalcogenide atom ratio allows full control of valley pseudospin dynamics. Our findings set a comprehensive approach for intrinsic and efficient manipulation of valley pseudospin and spin degree of freedom toward realistic opto-valleytronics devices.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html-
dc.relation.ispartofACS Nano-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectalloyed TMD monolayers-
dc.subjectroom-temperature valley polarization-
dc.subjectvalley pseudospin dynamics-
dc.subjectspin−orbit engineering-
dc.subjectelectron−hole exchange interaction-
dc.titleRoom-Temperature Valley Polarization in Atomically Thin Semiconductors via Chalcogenide Alloying -
dc.typeArticle-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.0c02703-
dc.identifier.pmid32806059-
dc.identifier.scopuseid_2-s2.0-85090079222-
dc.identifier.hkuros314660-
dc.identifier.volume14-
dc.identifier.issue8-
dc.identifier.spage9873-
dc.identifier.epage9883-
dc.publisher.placeUnited States-

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