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Article: Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment

TitleRepair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment
Authors
Zhao, XXu, JLiu, LLai, PTTang, WM
KeywordsTransistors
Plasmas
Sulfur
Hafnium oxide
Molybdenum
Issue Date2019
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2019, v. 66 n. 10, p. 4337-4342 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2019.2934186
AbstractThe effects of treating the HfO 2 gate dielectric in different plasmas (O 2 , N 2 , and NH 3 ) on the electrical characteristics of a back-gated MoS 2 transistor are investigated. It is found that the electrical properties of the device improved after HfO 2 is treated by these plasmas, in which NH 3 -plasma treatment results in the best electrical characteristics: high ON-OFF ratio of 1.26×10 7 , high extrinsic carrier mobility of 61.5 cm 2 /V·s, small subthreshold swing (SS) of 111 mV/dec, low interface-state density of 2.79 × 10 12 eV -1 ·cm -2 , and small hysteresis of 43 mV. These should be attributed to the incorporation of more N into the HfO 2 film by the NH 3 plasma to repair the oxygen vacancies and increase the k value of the HfO 2 film. Moreover, H from the NH 3 plasma effectively passivates the dangling bonds at/near the HfO 2 /MoS 2 interface, thus creating an excellent MoS 2 /HfO 2 interface.
Persistent Identifierhttp://hdl.handle.net/10722/288076
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000487477600034

 

DC FieldValueLanguage
dc.contributor.authorZhao, X-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2020-10-05T12:07:31Z-
dc.date.available2020-10-05T12:07:31Z-
dc.date.issued2019-
dc.identifier.citationIEEE Transactions on Electron Devices, 2019, v. 66 n. 10, p. 4337-4342-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/288076-
dc.description.abstractThe effects of treating the HfO 2 gate dielectric in different plasmas (O 2 , N 2 , and NH 3 ) on the electrical characteristics of a back-gated MoS 2 transistor are investigated. It is found that the electrical properties of the device improved after HfO 2 is treated by these plasmas, in which NH 3 -plasma treatment results in the best electrical characteristics: high ON-OFF ratio of 1.26×10 7 , high extrinsic carrier mobility of 61.5 cm 2 /V·s, small subthreshold swing (SS) of 111 mV/dec, low interface-state density of 2.79 × 10 12 eV -1 ·cm -2 , and small hysteresis of 43 mV. These should be attributed to the incorporation of more N into the HfO 2 film by the NH 3 plasma to repair the oxygen vacancies and increase the k value of the HfO 2 film. Moreover, H from the NH 3 plasma effectively passivates the dangling bonds at/near the HfO 2 /MoS 2 interface, thus creating an excellent MoS 2 /HfO 2 interface.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectTransistors-
dc.subjectPlasmas-
dc.subjectSulfur-
dc.subjectHafnium oxide-
dc.subjectMolybdenum-
dc.titleRepair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2019.2934186-
dc.identifier.scopuseid_2-s2.0-85077738076-
dc.identifier.hkuros315177-
dc.identifier.volume66-
dc.identifier.issue10-
dc.identifier.spage4337-
dc.identifier.epage4342-
dc.identifier.isiWOS:000487477600034-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9383-

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