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Article: Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors

TitleOptimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors
Authors
KeywordsCapacitance-equivalent thickness
Interface state density
MoS2 FETs
Oxide capacitance
Subthreshold swing
Issue Date2020
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2020, v. 31 n. 13, p. article no. 135206 How to Cite?
AbstractIn this work, we investigate the effects on the electrical properties of few-layered MoS2 field-effect transistors (FETs) following Al incorporation into ZrO2 as the gate dielectrics of the devices. A large improvement in device performance is achieved with the Al-doped ZrO2 gate dielectric when Zr:Al = 1:1. The relevant MoS2 transistor exhibits the best electrical characteristics: high carrier mobility of 40.6 cm2 V−1 s−1 (41% higher than that of the control sample, and an intrinsic mobility of 68.0 cm2 V−1 s−1), a small subthreshold swing of 143 mV dec−1, high on/off current ratio of 6 × 106 and small threshold voltage of 0.71 V. These are attributed to the facts that (i) Al incorporation into ZrO2 can decrease its oxygen vacancies; densify the dielectric film; and smooth the gate dielectric surface, thus reducing the traps at/near the Zr0.5Al0.5Oy/MoS2 interface and the gate leakage current; (ii) adjusting the dielectric constant of the gate dielectric to an appropriate value, which achieves a reasonable trade-off between the gate screening effect on the Coulomb-impurity scattering and the surface optical phonon scattering. These results demonstrate that optimized Zr0.5Al0.5Oy is a potential gate dielectric material for MoS2 FET applications.
Persistent Identifierhttp://hdl.handle.net/10722/288078
ISSN
2019 Impact Factor: 3.551
2015 SCImago Journal Rankings: 1.196
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSong, X-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorDeng, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2020-10-05T12:07:33Z-
dc.date.available2020-10-05T12:07:33Z-
dc.date.issued2020-
dc.identifier.citationNanotechnology, 2020, v. 31 n. 13, p. article no. 135206-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/288078-
dc.description.abstractIn this work, we investigate the effects on the electrical properties of few-layered MoS2 field-effect transistors (FETs) following Al incorporation into ZrO2 as the gate dielectrics of the devices. A large improvement in device performance is achieved with the Al-doped ZrO2 gate dielectric when Zr:Al = 1:1. The relevant MoS2 transistor exhibits the best electrical characteristics: high carrier mobility of 40.6 cm2 V−1 s−1 (41% higher than that of the control sample, and an intrinsic mobility of 68.0 cm2 V−1 s−1), a small subthreshold swing of 143 mV dec−1, high on/off current ratio of 6 × 106 and small threshold voltage of 0.71 V. These are attributed to the facts that (i) Al incorporation into ZrO2 can decrease its oxygen vacancies; densify the dielectric film; and smooth the gate dielectric surface, thus reducing the traps at/near the Zr0.5Al0.5Oy/MoS2 interface and the gate leakage current; (ii) adjusting the dielectric constant of the gate dielectric to an appropriate value, which achieves a reasonable trade-off between the gate screening effect on the Coulomb-impurity scattering and the surface optical phonon scattering. These results demonstrate that optimized Zr0.5Al0.5Oy is a potential gate dielectric material for MoS2 FET applications.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano-
dc.relation.ispartofNanotechnology-
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectCapacitance-equivalent thickness-
dc.subjectInterface state density-
dc.subjectMoS2 FETs-
dc.subjectOxide capacitance-
dc.subjectSubthreshold swing-
dc.titleOptimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6528/ab5b2d-
dc.identifier.pmid31766028-
dc.identifier.scopuseid_2-s2.0-85077937275-
dc.identifier.scopuseid_2-s2.0-85077937275-
dc.identifier.hkuros315182-
dc.identifier.volume31-
dc.identifier.issue13-
dc.identifier.spagearticle no. 135206-
dc.identifier.epagearticle no. 135206-
dc.identifier.isiWOS:000520162600001-
dc.publisher.placeUnited Kingdom-

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