File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Improved Detectivity of Flexible a-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment

TitleImproved Detectivity of Flexible a-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment
Authors
KeywordsElectron traps
Surface treatment
Fluorine
Plasmas
Tunneling
Issue Date2019
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2019, v. 40 n. 10, p. 1646-1649 How to Cite?
AbstractAmorphous InGaZnO (a-IGZO) UV photodetectors with a metal-semiconductor-metal structure were fabricated on polyethylene terephthalate (PET) substrates, and the effects of surface fluorine plasma treatment on a-IGZO were investigated. With this treatment, the oxygen vacancies (O vac 's) at the a-IGZO surface were effectively passivated, thus reducing the shallow-level donor states and electron traps. Accordingly, the direct and/or trap assisted tunnelings through the metal/a-IGZO Schottky barrier were suppressed, leading to a significant reduction in the dark current. On the other hand, the photo current was nearly unchanged if the treatment time was less than 20 min. It is due to the simultaneous reductions in hole trap and recombination center, both of which are related to the Ovac's at deep levels. As a result, a high detectivity of 4.36 × 10 13 Jones was realized with an increase of nearly 10 times. Moreover, a highly uniform trap distribution was achieved, and it could be beneficial to the photoconductive reliability of the device.
Persistent Identifierhttp://hdl.handle.net/10722/288457
ISSN
2020 Impact Factor: 4.187
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, YY-
dc.contributor.authorQian, LX-
dc.contributor.authorLai, PT-
dc.contributor.authorDai, TJ-
dc.contributor.authorLiu, XZ-
dc.date.accessioned2020-10-05T12:13:12Z-
dc.date.available2020-10-05T12:13:12Z-
dc.date.issued2019-
dc.identifier.citationIEEE Electron Device Letters, 2019, v. 40 n. 10, p. 1646-1649-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/288457-
dc.description.abstractAmorphous InGaZnO (a-IGZO) UV photodetectors with a metal-semiconductor-metal structure were fabricated on polyethylene terephthalate (PET) substrates, and the effects of surface fluorine plasma treatment on a-IGZO were investigated. With this treatment, the oxygen vacancies (O vac 's) at the a-IGZO surface were effectively passivated, thus reducing the shallow-level donor states and electron traps. Accordingly, the direct and/or trap assisted tunnelings through the metal/a-IGZO Schottky barrier were suppressed, leading to a significant reduction in the dark current. On the other hand, the photo current was nearly unchanged if the treatment time was less than 20 min. It is due to the simultaneous reductions in hole trap and recombination center, both of which are related to the Ovac's at deep levels. As a result, a high detectivity of 4.36 × 10 13 Jones was realized with an increase of nearly 10 times. Moreover, a highly uniform trap distribution was achieved, and it could be beneficial to the photoconductive reliability of the device.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Letters-
dc.rightsIEEE Electron Device Letters. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectElectron traps-
dc.subjectSurface treatment-
dc.subjectFluorine-
dc.subjectPlasmas-
dc.subjectTunneling-
dc.titleImproved Detectivity of Flexible a-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2019.2933503-
dc.identifier.scopuseid_2-s2.0-85078016353-
dc.identifier.hkuros315175-
dc.identifier.volume40-
dc.identifier.issue10-
dc.identifier.spage1646-
dc.identifier.epage1649-
dc.identifier.isiWOS:000489740400020-
dc.publisher.placeUnited States-
dc.identifier.issnl0741-3106-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats