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- Publisher Website: 10.1109/LED.2021.3051249
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Article: High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature-Processed Hf0.13La0.87O as Gate Dielectric
Title | High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature-Processed Hf0.13La0.87O as Gate Dielectric |
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Authors | |
Keywords | Organic thin-film transistor carrier mobility high-k dielectric HfLaO low temperature |
Issue Date | 2021 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | IEEE Electron Device Letters, 2021, v. 42 n. 3, p. 339-342 How to Cite? |
Abstract | High-performance pentace organic thin-film transistors (OTFTs) with room-temperature-processed Hf0.13 La0.87O as gate dielectric and Pd as gate electrode have been fabricated on both rigid Si and flexible polymide (PI) substrates. The OTFT on PI (Si) can achieve a high carrier mobility of 10.3 cm 2 V -1 s -1 (12.5 cm 2 V -1 s -1 ), and has a negligible hysteresis of -0.17 V (-0.08 V), small sub-threshold swing of 0.12 V/dec (0.11 V/dec) and low threshold voltage of -0.65 V (-0.86 V). After the devices have been exposed to the air for 30 days without encapsulation, their carrier mobilities degrade by less than 10%, indicating that the devices have good stability in the air. |
Persistent Identifier | http://hdl.handle.net/10722/306396 |
ISSN | 2021 Impact Factor: 4.816 2020 SCImago Journal Rankings: 1.337 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Han, CY | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2021-10-20T10:22:59Z | - |
dc.date.available | 2021-10-20T10:22:59Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2021, v. 42 n. 3, p. 339-342 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/306396 | - |
dc.description.abstract | High-performance pentace organic thin-film transistors (OTFTs) with room-temperature-processed Hf0.13 La0.87O as gate dielectric and Pd as gate electrode have been fabricated on both rigid Si and flexible polymide (PI) substrates. The OTFT on PI (Si) can achieve a high carrier mobility of 10.3 cm 2 V -1 s -1 (12.5 cm 2 V -1 s -1 ), and has a negligible hysteresis of -0.17 V (-0.08 V), small sub-threshold swing of 0.12 V/dec (0.11 V/dec) and low threshold voltage of -0.65 V (-0.86 V). After the devices have been exposed to the air for 30 days without encapsulation, their carrier mobilities degrade by less than 10%, indicating that the devices have good stability in the air. | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.rights | IEEE Electron Device Letters. Copyright © IEEE. | - |
dc.rights | ©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
dc.subject | Organic thin-film transistor | - |
dc.subject | carrier mobility | - |
dc.subject | high-k dielectric | - |
dc.subject | HfLaO | - |
dc.subject | low temperature | - |
dc.title | High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature-Processed Hf0.13La0.87O as Gate Dielectric | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2021.3051249 | - |
dc.identifier.scopus | eid_2-s2.0-85099540153 | - |
dc.identifier.hkuros | 326842 | - |
dc.identifier.volume | 42 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 339 | - |
dc.identifier.epage | 342 | - |
dc.identifier.isi | WOS:000622098100011 | - |
dc.publisher.place | United States | - |