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Article: 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses

Title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206 How to Cite?
AbstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42108
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:09Z-
dc.date.available2007-01-08T02:29:09Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42108-
dc.description.abstractDegradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.en_HK
dc.format.extent72484 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 86 n. 9, p. 5203-5206 and may be found at https://doi.org/10.1063/1.371501-
dc.subjectPhysics engineeringen_HK
dc.title1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stressesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=86&issue=9&spage=5203&epage=5206&date=1999&atitle=1/f+noise+in+n-channel+metal-oxide-semiconductor+field-effect+transistors+under+different+hot-carrier+stressesen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.371501en_HK
dc.identifier.scopuseid_2-s2.0-0037790521en_HK
dc.identifier.hkuros54541-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037790521&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5203en_HK
dc.identifier.epage5206en_HK
dc.identifier.isiWOS:000083189100072-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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