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Article: Characterization of Pt-Si interface by spectroscopic ellipsometry

TitleCharacterization of Pt-Si interface by spectroscopic ellipsometry
Authors
Liu, YCChen, TPFung, SBeling, CD
KeywordsPhysics engineering
Issue Date1994
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427 How to Cite?
DOI: http://dx.doi.org/10.1063/1.357968
AbstractSpectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42184
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:A1994PU81800037

 

DC FieldValueLanguage
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:12Z-
dc.date.available2007-01-08T02:31:12Z-
dc.date.issued1994en_HK
dc.identifier.citationJournal of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42184-
dc.description.abstractSpectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.en_HK
dc.format.extent582451 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1994 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427 and may be found at https://doi.org/10.1063/1.357968-
dc.subjectPhysics engineeringen_HK
dc.titleCharacterization of Pt-Si interface by spectroscopic ellipsometryen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=76&issue=11&spage=7423&epage=7427&date=1994&atitle=Characterization+of+Pt-Si+interface+by+spectroscopic+ellipsometryen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.357968en_HK
dc.identifier.scopuseid_2-s2.0-0343561790en_HK
dc.identifier.hkuros3334-
dc.identifier.volume76en_HK
dc.identifier.issue11en_HK
dc.identifier.spage7423en_HK
dc.identifier.epage7427en_HK
dc.identifier.isiWOS:A1994PU81800037-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, YC=7410214740en_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0021-8979-

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