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Article: Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

TitleGallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
Authors
Ling, CCMui, WKLam, CHBeling, CDFung, SLui, MKCheah, KWLi, KFZhao, YWGong, M
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2002, v. 80 n. 21, p. 3934-3936 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1482419
AbstractPositron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V Ga) related defect. Isochronal annealing studies showed at 300°C annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (∼2×10 17cm -3) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V Ga defect, at least for cases with annealing temperatures above 300°C, V Ga is not the acceptor responsible for the p-type conduction. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42206
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000175709000018
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorMui, WKen_HK
dc.contributor.authorLam, CHen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLui, MKen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorLi, KFen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-01-08T02:31:37Z-
dc.date.available2007-01-08T02:31:37Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics Letters, 2002, v. 80 n. 21, p. 3934-3936-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42206-
dc.description.abstractPositron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V Ga) related defect. Isochronal annealing studies showed at 300°C annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (∼2×10 17cm -3) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V Ga defect, at least for cases with annealing temperatures above 300°C, V Ga is not the acceptor responsible for the p-type conduction. © 2002 American Institute of Physics.en_HK
dc.format.extent48398 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2002, v. 80 n. 21, p. 3934-3936 and may be found at https://doi.org/10.1063/1.1482419-
dc.subjectPhysics engineeringen_HK
dc.titleGallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescenceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=80&issue=21&spage=3934&epage=3936&date=2002&atitle=Gallium+vacancy+and+the+residual+acceptor+in+undoped+GaSb+studied+by+positron+lifetime+spectroscopy+and+photoluminescenceen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1482419en_HK
dc.identifier.scopuseid_2-s2.0-79956058713en_HK
dc.identifier.hkuros66512-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79956058713&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue21en_HK
dc.identifier.spage3934en_HK
dc.identifier.epage3936en_HK
dc.identifier.isiWOS:000175709000018-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridMui, WK=6603105928en_HK
dc.identifier.scopusauthoridLam, CH=24525955200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridLi, KF=7404989771en_HK
dc.identifier.scopusauthoridZhao, YW=54780917900en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.issnl0003-6951-

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