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Article: Good rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3-δ/Nb–0.7 wt %-doped SrTiO3

TitleGood rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3-δ/Nb–0.7 wt %-doped SrTiO3
Authors
Hu, FXGao, JSun, JRShen, BG
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 9, p. 1869-1871 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1606098
AbstractSimple p–n junctions have been fabricated using a simple heteroepitaxial structure of La0.67Ca0.33MnO3–/Nb-doped SrTiO3. In such junctions, the La0.67Ca0.33MnO3– exhibits semiconductor behavior due to oxygen deficiency, whereas the Nb–0.7 wt %-doped SrTiO3 shows a metal behavior. These junctions demonstrate good rectifying characteristic in a wide temperature range from 5 to 350 K. An intriguing observation is that the rectifying behavior is nearly independent of temperature. © 2003 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42486
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000184992000061

 

DC FieldValueLanguage
dc.contributor.authorHu, FXen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorSun, JRen_HK
dc.contributor.authorShen, BGen_HK
dc.date.accessioned2007-01-29T08:50:58Z-
dc.date.available2007-01-29T08:50:58Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 9, p. 1869-1871-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42486-
dc.description.abstractSimple p–n junctions have been fabricated using a simple heteroepitaxial structure of La0.67Ca0.33MnO3–/Nb-doped SrTiO3. In such junctions, the La0.67Ca0.33MnO3– exhibits semiconductor behavior due to oxygen deficiency, whereas the Nb–0.7 wt %-doped SrTiO3 shows a metal behavior. These junctions demonstrate good rectifying characteristic in a wide temperature range from 5 to 350 K. An intriguing observation is that the rectifying behavior is nearly independent of temperature. © 2003 American Institute of Physics.en_HK
dc.format.extent59498 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 83 n. 9, p. 1869-1871 and may be found at https://doi.org/10.1063/1.1606098-
dc.subjectPhysics engineeringen_HK
dc.titleGood rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3-δ/Nb–0.7 wt %-doped SrTiO3en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=9&spage=1869&epage=1871&date=2003&atitle=Good+rectifying+characteristic+in+p–n+junctions+composed+of+La0.67Ca0.33MnO3-δ/Nb–0.7+wt+%-doped+SrTiO3en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1606098en_HK
dc.identifier.scopuseid_2-s2.0-0141522959-
dc.identifier.volume83-
dc.identifier.issue9-
dc.identifier.spage1869-
dc.identifier.epage1871-
dc.identifier.isiWOS:000184992000061-
dc.identifier.issnl0003-6951-

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