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Article: Gate-controllable spin battery

TitleGate-controllable spin battery
Authors
Long, WSun, QFGuo, HWang, J
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 7, p. 1397-1399 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1603331
AbstractWe propose a gate-controllable spin-battery for spin current. The spin battery consists of a lateral double quantum dot under a uniform magnetic field. A finite dc spin current is driven out of the device by controlling a set of gate voltages. Spin current can also be delivered in the absence of charge current. The proposed device should be realizable using present technology at low temperature. © 2003 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42487
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000184748600039

 

DC FieldValueLanguage
dc.contributor.authorLong, Wen_HK
dc.contributor.authorSun, QFen_HK
dc.contributor.authorGuo, Hen_HK
dc.contributor.authorWang, Jen_HK
dc.date.accessioned2007-01-29T08:50:59Z-
dc.date.available2007-01-29T08:50:59Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 7, p. 1397-1399-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42487-
dc.description.abstractWe propose a gate-controllable spin-battery for spin current. The spin battery consists of a lateral double quantum dot under a uniform magnetic field. A finite dc spin current is driven out of the device by controlling a set of gate voltages. Spin current can also be delivered in the absence of charge current. The proposed device should be realizable using present technology at low temperature. © 2003 American Institute of Physics.en_HK
dc.format.extent79183 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 83 n. 7, p. 1397-1399 and may be found at https://doi.org/10.1063/1.1603331-
dc.subjectPhysics engineeringen_HK
dc.titleGate-controllable spin batteryen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=7&spage=1397&epage=1399&date=2003&atitle=Gate-controllable+spin+batteryen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1603331en_HK
dc.identifier.scopuseid_2-s2.0-0042418749-
dc.identifier.hkuros84984-
dc.identifier.volume83-
dc.identifier.issue7-
dc.identifier.spage1397-
dc.identifier.epage1399-
dc.identifier.isiWOS:000184748600039-
dc.identifier.issnl0003-6951-

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