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Article: High-density matrix-addressable AlInGaN-based 368-nm microarray light-emitting diodes

TitleHigh-density matrix-addressable AlInGaN-based 368-nm microarray light-emitting diodes
Authors
Jeon, CWChoi, HWGu, EDawson, MD
Issue Date2004
PublisherIEEE.
Citation
Ieee Photonics Technology Letters, 2004, v. 16 n. 11, p. 2421-2423 How to Cite?
DOI: http://dx.doi.org/10.1109/LPT.2004.835626
AbstractWe report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 × 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 μW per 20-μm-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV. © 2004 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/42714
ISSN
1041-1135
2021 Impact Factor: 2.414
2020 SCImago Journal Rankings: 0.810
ISI Accession Number ID
WOS:000224566500007
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJeon, CWen_HK
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorGu, Een_HK
dc.contributor.authorDawson, MDen_HK
dc.date.accessioned2007-03-23T04:30:42Z-
dc.date.available2007-03-23T04:30:42Z-
dc.date.issued2004en_HK
dc.identifier.citationIeee Photonics Technology Letters, 2004, v. 16 n. 11, p. 2421-2423en_HK
dc.identifier.issn1041-1135en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42714-
dc.description.abstractWe report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 × 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 μW per 20-μm-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV. © 2004 IEEE.en_HK
dc.format.extent220757 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Photonics Technology Lettersen_HK
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleHigh-density matrix-addressable AlInGaN-based 368-nm microarray light-emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1041-1135&volume=16&issue=11&spage=2421&epage=2423&date=2004&atitle=High-density+matrix-addressable+AlInGaN-based+368-nm+microarray+light-emitting+diodesen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/LPT.2004.835626en_HK
dc.identifier.scopuseid_2-s2.0-7744243123en_HK
dc.identifier.hkuros109854-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-7744243123&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue11en_HK
dc.identifier.spage2421en_HK
dc.identifier.epage2423en_HK
dc.identifier.isiWOS:000224566500007-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJeon, CW=7006894315en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridGu, E=7004420026en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK
dc.identifier.issnl1041-1135-

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