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Article: Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

TitleAnodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Authors
Yuan, SKim, YTan, HHJagadish, CBurke, PTDao, LVGal, MChan, MCYLi, EHZou, JCai, DQCockayne, DJHCohen, RM
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1998, v. 83 n. 3, p. 1305-1311 How to Cite?
DOI: http://dx.doi.org/10.1063/1.366830
AbstractEnhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing. ©1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42783
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000071726400022

 

DC FieldValueLanguage
dc.contributor.authorYuan, Sen_HK
dc.contributor.authorKim, Yen_HK
dc.contributor.authorTan, HHen_HK
dc.contributor.authorJagadish, Cen_HK
dc.contributor.authorBurke, PTen_HK
dc.contributor.authorDao, LVen_HK
dc.contributor.authorGal, Men_HK
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorZou, Jen_HK
dc.contributor.authorCai, DQen_HK
dc.contributor.authorCockayne, DJHen_HK
dc.contributor.authorCohen, RMen_HK
dc.date.accessioned2007-03-23T04:32:06Z-
dc.date.available2007-03-23T04:32:06Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal of Applied Physics, 1998, v. 83 n. 3, p. 1305-1311-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42783-
dc.description.abstractEnhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing. ©1998 American Institute of Physics.en_HK
dc.format.extent168822 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCopyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1998, v. 83 n. 3, p. 1305-1311 and may be found at https://doi.org/10.1063/1.366830-
dc.subjectPhysics engineeringen_HK
dc.titleAnodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=83&issue=3&spage=1305&epage=1311&date=1998&atitle=Anodic-oxide-induced+interdiffusion+in+GaAs/AlGaAs+quantum+wellsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.366830en_HK
dc.identifier.scopuseid_2-s2.0-0001316362-
dc.identifier.hkuros38023-
dc.identifier.volume83-
dc.identifier.issue3-
dc.identifier.spage1305-
dc.identifier.epage1311-
dc.identifier.isiWOS:000071726400022-
dc.identifier.issnl0021-8979-

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