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Article: Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD

TitleLow turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD
Authors
Yan, BPHsu, CCWang, XQYang, ES
KeywordsDHBT
GaAs/GaAsSb/GaAs DHBT
GaAsSb
InGaP/GaAs0.92Sb0.8/GaAs
Low turn-on voltage
MOCVD
Issue Date2002
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2002, v. 23 n. 4, p. 170-172 How to Cite?
DOI: http://dx.doi.org/10.1109/55.992825
AbstractA novel InGaP/GaAs0.92Sb0.08/GaAs double heterojunction bipolar transistor (DHBT) with low turn-on voltage has been fabricated. The turn-on voltage of the DHBT is typically 150 mV lower than that of the conventional InGaP/GaAs HBT, indicating that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs. A current gain of 50 has been obtained for the InGaP/GaAs0.92Sb0.08/GaAs DHBT. The results show that InGaP/GaAsSb/GaAs DHBTs have a great potential for reducing operating voltage and power dissipation.
Persistent Identifierhttp://hdl.handle.net/10722/42907
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:000174667800002
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorWang, XQen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-03-23T04:34:28Z-
dc.date.available2007-03-23T04:34:28Z-
dc.date.issued2002en_HK
dc.identifier.citationIeee Electron Device Letters, 2002, v. 23 n. 4, p. 170-172en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42907-
dc.description.abstractA novel InGaP/GaAs0.92Sb0.08/GaAs double heterojunction bipolar transistor (DHBT) with low turn-on voltage has been fabricated. The turn-on voltage of the DHBT is typically 150 mV lower than that of the conventional InGaP/GaAs HBT, indicating that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs. A current gain of 50 has been obtained for the InGaP/GaAs0.92Sb0.08/GaAs DHBT. The results show that InGaP/GaAsSb/GaAs DHBTs have a great potential for reducing operating voltage and power dissipation.en_HK
dc.format.extent177480 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectDHBTen_HK
dc.subjectGaAs/GaAsSb/GaAs DHBTen_HK
dc.subjectGaAsSben_HK
dc.subjectInGaP/GaAs0.92Sb0.8/GaAsen_HK
dc.subjectLow turn-on voltageen_HK
dc.subjectMOCVDen_HK
dc.titleLow turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVDen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=23&issue=4&spage=170&epage=172&date=2002&atitle=Low+turn-on+voltage+InGaP/GaAsSb/GaAs+double+HBTs+grown+by+MOCVDen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.992825en_HK
dc.identifier.scopuseid_2-s2.0-0036540915en_HK
dc.identifier.hkuros72459-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036540915&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue4en_HK
dc.identifier.spage170en_HK
dc.identifier.epage172en_HK
dc.identifier.isiWOS:000174667800002-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridWang, XQ=7501857054en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.issnl0741-3106-

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