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Article: A humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film

TitleA humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film
Authors
Li, GQLai, PTHuang, MQZeng, SHLi, BCheng, YC
KeywordsPhysics Engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2000, v. 87 n. 12, p. 8716-8720 How to Cite?
DOI: http://dx.doi.org/10.1063/1.373601
AbstractA new physical model for a humidity-sensitive metal-insulator-semiconductor (MIS) capacitor with porous thin film is proposed. The model is used to determine water adsorption isotherm and calculate pore-size distribution of the film. The relative-humidity dependences of the capacitance and resistance of the film were measured. The effects of frequency on the dielectric constant of the film and the current of the MIS structure under various relative humidities were investigated. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44821
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000087346400070
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, GQen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorLi, Ben_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-10-30T06:10:58Z-
dc.date.available2007-10-30T06:10:58Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal of Applied Physics, 2000, v. 87 n. 12, p. 8716-8720-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44821-
dc.description.abstractA new physical model for a humidity-sensitive metal-insulator-semiconductor (MIS) capacitor with porous thin film is proposed. The model is used to determine water adsorption isotherm and calculate pore-size distribution of the film. The relative-humidity dependences of the capacitance and resistance of the film were measured. The effects of frequency on the dielectric constant of the film and the current of the MIS structure under various relative humidities were investigated. © 2000 American Institute of Physics.en_HK
dc.format.extent377194 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2000, v. 87 n. 12, p. 8716-8720 and may be found at https://doi.org/10.1063/1.373601-
dc.subjectPhysics Engineeringen_HK
dc.titleA humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic filmen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=87&issue=12&spage=8716&epage=8720&date=2000&atitle=A+humidity-sensing+model+for+metal-insulator-semiconductor+capacitors+with+porous+ceramic+filmen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.373601en_HK
dc.identifier.scopuseid_2-s2.0-0000421740en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000421740&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue12en_HK
dc.identifier.spage8716en_HK
dc.identifier.epage8720en_HK
dc.identifier.isiWOS:000087346400070-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridHuang, MQ=7404259759en_HK
dc.identifier.scopusauthoridZeng, SH=7202412592en_HK
dc.identifier.scopusauthoridLi, B=26643217800en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.identifier.issnl0021-8979-

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