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Article: Growth mechanism of stacked-cone and smooth-surface GaN nanowires

TitleGrowth mechanism of stacked-cone and smooth-surface GaN nanowires
Authors
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 18, article no. 183103, p. 1-3 How to Cite?
AbstractGallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3 Ar gas flow. A mixture of nanowires growing along [10 1- 0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45252
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorChiu, CSen_HK
dc.contributor.authorGwo, Sen_HK
dc.date.accessioned2007-10-30T06:21:03Z-
dc.date.available2007-10-30T06:21:03Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 18, article no. 183103, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45252-
dc.description.abstractGallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3 Ar gas flow. A mixture of nanowires growing along [10 1- 0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed. © 2005 American Institute of Physics.en_HK
dc.format.extent249892 bytes-
dc.format.extent3553 bytes-
dc.format.extent4804 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 18, article no. 183103, p. 1-3 and may be found at https://doi.org/10.1063/1.2126118-
dc.subjectPhysics Engineeringen_HK
dc.titleGrowth mechanism of stacked-cone and smooth-surface GaN nanowiresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=18&spage=183103:1&epage=3&date=2005&atitle=Growth+mechanism+of+stacked-cone+and+smooth-surface+GaN+nanowiresen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2126118en_HK
dc.identifier.scopuseid_2-s2.0-27344446337en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27344446337&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue18en_HK
dc.identifier.spagearticle no. 183103, p. 1-
dc.identifier.epagearticle no. 183103, p. 3-
dc.identifier.isiWOS:000232886400066-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCai, XM=8923610200en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridChiu, CS=25627529900en_HK
dc.identifier.scopusauthoridGwo, S=18835295800en_HK

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