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Conference Paper: Analysis of coupling effect on twin waveguides defined by ion-implanted AlGaAs/GaAs quantum wells

TitleAnalysis of coupling effect on twin waveguides defined by ion-implanted AlGaAs/GaAs quantum wells
Authors
Keywordswaveguide couplers
ion implantation
semiconductor waveguides
quantum well devices
diffusion process
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Integrated optic devices II, San Jose, California, USA, 28-30 January 1998. In Proceedings of SPIE, 1998, v. 3278, p. 207-218 How to Cite?
AbstractAn accurate model is presented for the analysis of ion-implanted AlGaAs/GaAs multi-quantum well symmetric and asymmetric twin waveguides. The modal propagation constants, modal indices and field profiles of the leading supermodes are solved numerically by using a quasi-vector method based on the Finite Difference method. Impurity induced disordering defined multi-quantum well twin waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They provide a more flexible control over the waveguiding and coupling characteristics by changing the diffusion time, the ion implant energy, the mask width, the waveguide separation, and the operating wavelength. By suitably varying these parameters, single-mode operation can be achieved, while the coupling length can be theoretically tuned from a few millimeters to a hundred meters, a difference in the order of lOs. Impurity induced disordering produced waveguide arrays are therefore highly recommended for integrated photonic IC realisation.
Persistent Identifierhttp://hdl.handle.net/10722/46084
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, ATHen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:42:11Z-
dc.date.available2007-10-30T06:42:11Z-
dc.date.issued1998en_HK
dc.identifier.citationIntegrated optic devices II, San Jose, California, USA, 28-30 January 1998. In Proceedings of SPIE, 1998, v. 3278, p. 207-218-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46084-
dc.description.abstractAn accurate model is presented for the analysis of ion-implanted AlGaAs/GaAs multi-quantum well symmetric and asymmetric twin waveguides. The modal propagation constants, modal indices and field profiles of the leading supermodes are solved numerically by using a quasi-vector method based on the Finite Difference method. Impurity induced disordering defined multi-quantum well twin waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They provide a more flexible control over the waveguiding and coupling characteristics by changing the diffusion time, the ion implant energy, the mask width, the waveguide separation, and the operating wavelength. By suitably varying these parameters, single-mode operation can be achieved, while the coupling length can be theoretically tuned from a few millimeters to a hundred meters, a difference in the order of lOs. Impurity induced disordering produced waveguide arrays are therefore highly recommended for integrated photonic IC realisation.en_HK
dc.format.extent442371 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 1998 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.298201-
dc.subjectwaveguide couplersen_HK
dc.subjection implantationen_HK
dc.subjectsemiconductor waveguidesen_HK
dc.subjectquantum well devicesen_HK
dc.subjectdiffusion processen_HK
dc.titleAnalysis of coupling effect on twin waveguides defined by ion-implanted AlGaAs/GaAs quantum wellsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3278&spage=207&epage=218&date=1998&atitle=Analysis+of+coupling+effect+on+twin+waveguides+defined+by+ion-implanted+AlGaAs/GaAs+quantum+wellsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.298201en_HK
dc.identifier.scopuseid_2-s2.0-0032225986-
dc.identifier.hkuros38009-

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