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  Patent History
  • Application
    US 09/566885 2000-05-08
  • Granted
    US 6338922 2002-01-15
  Patent Family
Supplementary

granted patent: Optimized Alternating Phase Shifted Mask Design

TitleOptimized Alternating Phase Shifted Mask Design
Granted PatentUS 6338922
Granted Date2002-01-15
Priority Date2000-05-08 US 09/566885
Inventors
Liebmann, LWong, AKK
Issue Date2002
Citation
US Patent 6338922. Washington, DC: US Patent and Trademark Office (USPTO), 2002 How to Cite?
AbstractA Method For Reducing Lens Aberrations Sensitivity And Proximity Effects Of Alternating Phase Shifted Masks Is Described. The Critical Features Of A Chip Design Layout Are First Identified. Multiple, Narrow Phase Regions And Auxiliary Phase Transitions, Which Provide Additional Opaque Features, Are Then Formed Alongside The Critical Features Such That A Grating Pattern Of Substantially Uniform Pitch Is Printed. Together With A Complementary Trim Mask, The Circuit Pattern So Delineated Has Reduced Sensitivity To Lens Aberrations And Proximity Effects.
Persistent Identifierhttp://hdl.handle.net/10722/46532
References

 

DC FieldValueLanguage
dc.date.accessioned2007-10-30T06:52:11Z-
dc.date.available2007-10-30T06:52:11Z-
dc.date.issued2002-
dc.identifier.citationUS Patent 6338922. Washington, DC: US Patent and Trademark Office (USPTO), 2002en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46532-
dc.description.abstractA Method For Reducing Lens Aberrations Sensitivity And Proximity Effects Of Alternating Phase Shifted Masks Is Described. The Critical Features Of A Chip Design Layout Are First Identified. Multiple, Narrow Phase Regions And Auxiliary Phase Transitions, Which Provide Additional Opaque Features, Are Then Formed Alongside The Critical Features Such That A Grating Pattern Of Substantially Uniform Pitch Is Printed. Together With A Complementary Trim Mask, The Circuit Pattern So Delineated Has Reduced Sensitivity To Lens Aberrations And Proximity Effects.en_HK
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dc.relation.isreferencedbyUS 2012089953 (A1) 2012-04-12en_HK
dc.relation.isreferencedbyUS 2012070767 (A1) 2012-03-22en_HK
dc.relation.isreferencedbyUS 2011029940 (A1) 2011-02-03en_HK
dc.relation.isreferencedbyUS 2008286664 (A1) 2008-11-20en_HK
dc.relation.isreferencedbyUS 7659042 (B2) 2010-02-09en_HK
dc.relation.isreferencedbyUS 2008187869 (A1) 2008-08-07en_HK
dc.relation.isreferencedbyUS 7629109 (B2) 2009-12-08en_HK
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dc.relation.isreferencedbyUS 7549140 (B2) 2009-06-16en_HK
dc.relation.isreferencedbyUS 2005142457 (A1) 2005-06-30en_HK
dc.relation.isreferencedbyUS 7655362 (B2) 2010-02-02en_HK
dc.relation.isreferencedbyUS 2005060682 (A1) 2005-03-17en_HK
dc.relation.isreferencedbyUS 7216331 (B2) 2007-05-08en_HK
dc.relation.isreferencedbyUS 2005031972 (A1) 2005-02-10en_HK
dc.relation.isreferencedbyUS 7435513 (B2) 2008-10-14en_HK
dc.relation.isreferencedbyUS 2006040188 (A1) 2006-02-23en_HK
dc.relation.isreferencedbyUS 7470489 (B2) 2008-12-30en_HK
dc.relation.isreferencedbyUS 2005042527 (A1) 2005-02-24en_HK
dc.relation.isreferencedbyUS 7585595 (B2) 2009-09-08en_HK
dc.titleOptimized Alternating Phase Shifted Mask Designen_HK
dc.typePatenten_HK
dc.description.naturepublished_or_final_version-
dc.contributor.inventorLiebmann, Len_HK
dc.contributor.inventorWong, AKKen_HK
patents.identifier.applicationUS 09/566885en_HK
patents.identifier.grantedUS 6338922en_HK
patents.description.assigneeIbm [Us]en_HK
patents.description.countryUnited States of Americaen_HK
patents.date.granted2002-01-15en_HK
dc.relation.referencesUS 6057063 (A) 2000-05-02en_HK
dc.relation.referencesUS 5537648 (A) 1996-07-16en_HK
dc.relation.referencesUS 5636131 (A) 1997-06-03en_HK
dc.relation.referencesUS 5807649 (A) 1998-09-15en_HK
dc.relation.referencesUS 5858580 (A) 1999-01-12en_HK
dc.relation.referencesUS 5883813 (A) 1999-03-16en_HK
patents.date.application2000-05-08en_HK
patents.date.priority2000-05-08 US 09/566885en_HK
patents.description.ccUSen_HK
patents.relation.familyUS 6338922 (B1) 2002-01-15en_HK
patents.description.kindB1en_HK
patents.typePatent_granteden_HK

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