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Conference Paper: Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy

TitleVacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy
Authors
Lam, CHLing, CCBeling, CDFung, SWeng, HMHang, DS
Issue Date2003
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Symposium R: Radiation Effects and Ion-Beam Processing of Materials, Boston, Massachusetts, USA, 1-5 December 2003, v. 792, p. 255-260 How to Cite?
AbstractPositron lifetime spectroscopy was employed to study the as-electron-irradiated (10 MeV, 1×10 18 cm -2) n-type 6H silicon carbide sample in the measuring temperature range of 15 K to 294 K. Isochronal annealing studies were also performed up to the temperature of 1373 K by carrying out the room temperature positron lifetime measurement. Negatively charged carbon vacancies and V cV si divacancy were identified as the major vacancy type defects induced by the electron irradiation process. The concentration of the V cV si divacancy was found to decrease dramatically after the 1973 K annealing.
DescriptionPaper no. R3.19
Persistent Identifierhttp://hdl.handle.net/10722/54218
ISBN
155899730X
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLam, CHen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorHang, DSen_HK
dc.date.accessioned2009-04-03T07:40:01Z-
dc.date.available2009-04-03T07:40:01Z-
dc.date.issued2003en_HK
dc.identifier.citationSymposium R: Radiation Effects and Ion-Beam Processing of Materials, Boston, Massachusetts, USA, 1-5 December 2003, v. 792, p. 255-260en_HK
dc.identifier.isbn155899730Xen_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54218-
dc.descriptionPaper no. R3.19en_HK
dc.description.abstractPositron lifetime spectroscopy was employed to study the as-electron-irradiated (10 MeV, 1×10 18 cm -2) n-type 6H silicon carbide sample in the measuring temperature range of 15 K to 294 K. Isochronal annealing studies were also performed up to the temperature of 1373 K by carrying out the room temperature positron lifetime measurement. Negatively charged carbon vacancies and V cV si divacancy were identified as the major vacancy type defects induced by the electron irradiation process. The concentration of the V cV si divacancy was found to decrease dramatically after the 1973 K annealing.en_HK
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.titleVacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=155899730X&volume=792&spage=255&epage=260&date=2004&atitle=Vacancies+in+electron+irradiated+6H+silicon+carbide+studied+by+positron+annihilation+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-2442593916en_HK
dc.identifier.hkuros85825-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2442593916&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume792en_HK
dc.identifier.spage255en_HK
dc.identifier.epage260en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLam, CH=24525955200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridHang, DS=7004115517en_HK
dc.identifier.issnl0272-9172-

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