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Article: Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors

TitleFano resonance in the luminescence spectra of donor bound excitons in polar semiconductors
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 3, article no. 032107 How to Cite?
AbstractAn unusual response in the luminescence measurements of GaN thin film and ZnO bulk crystal is observed at low temperatures. The authors demonstrate theoretically that such an unusual response is due to the longitudinal optical phonon mediated Fano resonance involved in the recombination process of the donor bound exciton. The line shapes obtained by the calculation in the present mechanism are in excellent agreement with the experimental results. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57322
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorJin, KJen_HK
dc.contributor.authorXu, SJen_HK
dc.date.accessioned2010-04-12T01:33:09Z-
dc.date.available2010-04-12T01:33:09Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 3, article no. 032107-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57322-
dc.description.abstractAn unusual response in the luminescence measurements of GaN thin film and ZnO bulk crystal is observed at low temperatures. The authors demonstrate theoretically that such an unusual response is due to the longitudinal optical phonon mediated Fano resonance involved in the recombination process of the donor bound exciton. The line shapes obtained by the calculation in the present mechanism are in excellent agreement with the experimental results. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 90 n. 3, article no. 032107 and may be found at https://doi.org/10.1063/1.2432286-
dc.subjectPhysics engineeringen_HK
dc.titleFano resonance in the luminescence spectra of donor bound excitons in polar semiconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&issue=3&spage=032107&epage=1 &date=2007&atitle=Fano+resonance+in+the+luminescence+spectra+of+donor+bound+excitons+in+polar+semiconductorsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2432286en_HK
dc.identifier.scopuseid_2-s2.0-33846440849en_HK
dc.identifier.hkuros125718-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846440849&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue3en_HK
dc.identifier.spagearticle no. 032107-
dc.identifier.epagearticle no. 032107-
dc.identifier.isiWOS:000243582400044-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJin, KJ=7102766964en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.issnl0003-6951-

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