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Article: Effect of annealing on the performance of CrO3/ZnO light emitting diodes

TitleEffect of annealing on the performance of CrO3/ZnO light emitting diodes
Authors
Xi, YYNg, AMCHsu, YFDjurišić, ABHuang, BQGe, LChen, XYChan, WKTam, HLCheah, KW
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 94 n. 20, article no. 203502 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3140962
AbstractHeterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/58443
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000266342800072
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding
Outstanding Young Researcher Award
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements.

References
References in Scopus
Grants
Light Emitting Diodes Fabricated by Electrochemical Methods

 

DC FieldValueLanguage
dc.contributor.authorXi, YYen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorHuang, BQen_HK
dc.contributor.authorGe, Len_HK
dc.contributor.authorChen, XYen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorTam, HLen_HK
dc.contributor.authorCheah, KWen_HK
dc.date.accessioned2010-05-31T03:30:23Z-
dc.date.available2010-05-31T03:30:23Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 20, article no. 203502-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58443-
dc.description.abstractHeterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 94 n. 20, article no. 203502 and may be found at https://doi.org/10.1063/1.3140962-
dc.titleEffect of annealing on the performance of CrO3/ZnO light emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=94&spage=203502: 1&epage=3&date=2009&atitle=Effect+of+annealing+on+the+performance+of+CrO3/ZnO+light+emitting+diodesen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3140962en_HK
dc.identifier.scopuseid_2-s2.0-65949087011en_HK
dc.identifier.hkuros155955en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65949087011&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue20en_HK
dc.identifier.spagearticle no. 203502-
dc.identifier.epagearticle no. 203502-
dc.identifier.isiWOS:000266342800072-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods-
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridHuang, BQ=35240301800en_HK
dc.identifier.scopusauthoridGe, L=35210422900en_HK
dc.identifier.scopusauthoridChen, XY=22933917300en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridTam, HL=7101835048en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.issnl0003-6951-

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